Infineon IPD Type P-Channel MOSFET, 180 A, 75 V P, 3-Pin TO-252 IPD380P06NMATMA1
- RS Stock No.:
- 244-8546
- Distrelec Article No.:
- 304-40-507
- Mfr. Part No.:
- IPD380P06NMATMA1
- Manufacturer:
- Infineon
The image is for reference only, please refer to product details and specifications
Get a bulk buy discount
Add 10 more to save 2%
View bulk pricing optionsSubtotal (1 pack of 2 units)*
HK$42.30
FREE delivery for orders over HK$250.00
In Stock
- 6,940 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* | Saving |
|---|---|---|---|
| 2 - 8 | HK$21.15 | HK$42.30 | - |
| 10 - 98 | HK$20.70 | HK$41.40 | 2% |
| 100 - 248 | HK$20.15 | HK$40.30 | 4% |
| 250 - 498 | HK$19.70 | HK$39.40 | 6% |
| 500 + | HK$19.15 | HK$38.30 | 9% |
*price indicative
- RS Stock No.:
- 244-8546
- Distrelec Article No.:
- 304-40-507
- Mfr. Part No.:
- IPD380P06NMATMA1
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 180A | |
| Maximum Drain Source Voltage Vds | 75V | |
| Package Type | TO-252 | |
| Series | IPD | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3mΩ | |
| Channel Mode | P | |
| Forward Voltage Vf | 1.3V | |
| Maximum Power Dissipation Pd | 81W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 180A | ||
Maximum Drain Source Voltage Vds 75V | ||
Package Type TO-252 | ||
Series IPD | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3mΩ | ||
Channel Mode P | ||
Forward Voltage Vf 1.3V | ||
Maximum Power Dissipation Pd 81W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
Infineon IPD Series MOSFET, 75V Maximum Drain Source Voltage, 180A Maximum Continuous Drain Current - IPD380P06NMATMA1
This MOSFET is a P-channel power transistor designed for high-current switching in surface-mount applications. It operates across a wide temperature range and is suitable for automotive and industrial contexts where elevated thermal and electrical performance are required.
Features and Benefits:
• 75V maximum drain-source voltage enables higher-voltage switching
• 3mΩ low Rds(on) reduces conduction losses during heavy current flow
• 180A continuous drain current supports sustained high-current loads
• 81W power dissipation handles significant thermal stress
• 80nC typical gate charge permits controlled switching energy management
• 20V maximum gate-source rating accommodates robust gate drive levels
• 3mΩ low Rds(on) reduces conduction losses during heavy current flow
• 180A continuous drain current supports sustained high-current loads
• 81W power dissipation handles significant thermal stress
• 80nC typical gate charge permits controlled switching energy management
• 20V maximum gate-source rating accommodates robust gate drive levels
Applications
• Suitable for high-current DC power distribution stages
• Ideal for automotive power modules meeting vehicle requirements
• Used for motor-drive low-side or high-side switching
• Can be used for board-level power management in harsh environments
• Used with thermal-management systems in power assemblies
• Ideal for automotive power modules meeting vehicle requirements
• Used for motor-drive low-side or high-side switching
• Can be used for board-level power management in harsh environments
• Used with thermal-management systems in power assemblies
What thermal range can it withstand in demanding environments?
It is rated to operate from −55°C up to 175°C to cover extreme temperature conditions.
How does the package affect mounting and assembly?
The TO-252 surface-mount package allows automated soldering and Compact board placement for power designs.
What gating considerations are necessary for switching performance?
Typical gate charge is 80nC, so gate drivers must supply sufficient charge for the intended switching speed.
What industry qualifications support its use in vehicle systems?
It meets the automotive AEC‑Q101 standard for components used in vehicle applications.
Are there environmental restrictions for its use regarding hazardous substances?
It is compliant with RoHS requirements limiting specified hazardous materials.
Related links
- Infineon IPD Type P-Channel MOSFET 75 V P, 3-Pin TO-252
- Infineon IPD Type N-Channel MOSFET 75 V N, 3-Pin TO-252
- Infineon IPD Type N-Channel MOSFET 75 V N, 3-Pin TO-252 IPD65R660CFDAATMA1
- Infineon IPD Type N-Channel MOSFET 75 V N, 3-Pin TO-252 IPD050N10N5ATMA1
- Infineon IPD Type N-Channel MOSFET 75 V N, 3-Pin TO-252 IPD80R450P7ATMA1
- Infineon IPD Type N-Channel MOSFET 75 V N, 3-Pin TO-252 IPD60R145CFD7ATMA1
- Infineon IPD Type N-Channel MOSFET 40 V P, 3-Pin TO-252
- Infineon IPD Type N-Channel MOSFET 40 V P, 3-Pin TO-252 IPD5N25S3430ATMA1