Infineon iPB N-Channel MOSFET, 273 A, 100 V N, 3-Pin TO-263
- RS Stock No.:
- 242-5820
- Mfr. Part No.:
- IPB048N15N5LFATMA1
- Manufacturer:
- Infineon
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HK$33,113.00
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Units | Per unit | Per Reel* |
|---|---|---|
| 1000 - 1000 | HK$33.113 | HK$33,113.00 |
| 2000 - 2000 | HK$32.451 | HK$32,451.00 |
| 3000 + | HK$31.802 | HK$31,802.00 |
*price indicative
- RS Stock No.:
- 242-5820
- Mfr. Part No.:
- IPB048N15N5LFATMA1
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 273A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | iPB | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.7mΩ | |
| Channel Mode | N | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 81W | |
| Maximum Operating Temperature | +150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 273A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series iPB | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.7mΩ | ||
Channel Mode N | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Maximum Gate Source Voltage Vgs 20V | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 81W | ||
Maximum Operating Temperature +150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
Infineon iPB Series MOSFET, 100V Maximum Drain Source Voltage, 273A Maximum Continuous Drain Current - IPB048N15N5LFATMA1
This n-channel MOSFET is a power switching device designed for high-current, high-voltage applications where robust thermal and electrical performance is required. It operates across a wide ambient range and is supplied in a surface-mount TO-263 package suitable for heat-managed PCBs. The device is RoHS-compliant and intended for systems requiring substantial continuous drain capability and controlled gate drive.
Features and Benefits:
• 100V drain-source withstand enabling high-voltage switching
• 273A continuous drain current for heavy-load handling
• 1.7mΩ low Rds(on) reducing conduction losses
• 81W power dissipation supporting high-power operation
• 80nC total gate charge for predictable switching energy
• 1.2V forward voltage minimising diode conduction drop
• 273A continuous drain current for heavy-load handling
• 1.7mΩ low Rds(on) reducing conduction losses
• 81W power dissipation supporting high-power operation
• 80nC total gate charge for predictable switching energy
• 1.2V forward voltage minimising diode conduction drop
Applications
• Suitable for high-current power supplies and converters
• Ideal for motor-drive stages requiring large current
• Used for server power distribution and bus switching
• Can be used for telecom rectifiers and inverters
• Appropriate for industrial switching in harsh temperatures
• Ideal for motor-drive stages requiring large current
• Used for server power distribution and bus switching
• Can be used for telecom rectifiers and inverters
• Appropriate for industrial switching in harsh temperatures
What gate voltage limits must be observed for safe operation?
The gate should not exceed a 20V Vgs limit to prevent gate damage.
How does it tolerate extreme thermal environments?
It is specified to operate from -55°C up to +150°C for wide temperature-range use.
What mounting method is required for assembly?
The device is intended for surface mounting in a TO-263 footprint.
What conduction behaviour can designers expect from the intrinsic diode?
The forward conduction characteristic is specified as 1.2V Vf for diode-related current flow.
Which channel polarity does the device present for circuit integration?
It uses an N-channel configuration for conventional high-side or low-side switching.
Related links
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