Infineon iPB N-Channel MOSFET, 273 A, 100 V N, 7-Pin TO-263
- RS Stock No.:
- 242-5816
- Mfr. Part No.:
- IPB017N10N5ATMA1
- Manufacturer:
- Infineon
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Units | Per unit | Per Reel* |
|---|---|---|
| 1000 - 1000 | HK$25.952 | HK$25,952.00 |
| 2000 - 2000 | HK$25.433 | HK$25,433.00 |
| 3000 + | HK$24.924 | HK$24,924.00 |
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- RS Stock No.:
- 242-5816
- Mfr. Part No.:
- IPB017N10N5ATMA1
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 273A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | TO-263 | |
| Series | iPB | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 1.7mΩ | |
| Channel Mode | N | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Power Dissipation Pd | 81W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 273A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type TO-263 | ||
Series iPB | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 1.7mΩ | ||
Channel Mode N | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Power Dissipation Pd 81W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
Infineon iPB Series MOSFET, 100V Maximum Drain Source Voltage, 273A Maximum Continuous Drain Current - IPB017N10N5ATMA1
This MOSFET is a high-current N-channel switching device designed for surface-mount power applications. It operates across a wide temperature span and is intended for demanding industrial and power-conversion environments where robust current handling and thermal resilience are required.
Features and Benefits:
• Low on-resistance delivers minimal conduction losses and improved efficiency
• High continuous drain current enables sustained heavy-load operation
• 100V drain rating supports common intermediate-voltage topologies
• 81W power dissipation allows higher power throughput in Compact packages
• 80nC typical gate charge supports responsive switching in converters
• 20V gate rating permits broad gate-drive voltage flexibility
• High continuous drain current enables sustained heavy-load operation
• 100V drain rating supports common intermediate-voltage topologies
• 81W power dissipation allows higher power throughput in Compact packages
• 80nC typical gate charge supports responsive switching in converters
• 20V gate rating permits broad gate-drive voltage flexibility
Applications
• Suitable for high-current DC-DC power converters
• Ideal for synchronous rectification in power supplies
• Used with motor-drive half-bridge stages
• Can be used for server and telecoms power rails
• Suitable for battery-management and inverter systems
• Ideal for synchronous rectification in power supplies
• Used with motor-drive half-bridge stages
• Can be used for server and telecoms power rails
• Suitable for battery-management and inverter systems
What thermal extremes can this device withstand?
It is specified to operate from -55°C up to 175°C supporting wide-range industrial temperature demands.
How does the package type influence mounting and heat management?
The TO-263 surface-mount format enables direct PCB mounting with low thermal resistance paths for heatsinking arrangements.
What gate-drive considerations should be observed for switching performance?
With an 80nC typical gate charge and a 20V maximum gate rating, gate drivers must supply sufficient current while respecting the Vgs limit to achieve fast transitions.
What channel characteristics affect conduction and switching losses?
The device uses an N-channel architecture with a very low drain-source resistance which reduces conduction losses while maintaining high current capability.
Is this device intended for automotive qualification?
The part is not classified as automotive standard-compliant but meets RoHS environmental requirements.
Related links
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