Infineon BSZ N-Channel MOSFET, 212 A, 40 V N, 8-Pin PQFN BSZ024N04LS6ATMA1

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HK$20.80

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2 - 8HK$10.40HK$20.80
10 - 98HK$10.15HK$20.30
100 - 248HK$9.95HK$19.90
250 - 498HK$9.70HK$19.40
500 +HK$9.45HK$18.90

*price indicative

Packaging Options:
RS Stock No.:
241-9703
Mfr. Part No.:
BSZ024N04LS6ATMA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

N

Product Type

MOSFET

Maximum Continuous Drain Current Id

212A

Maximum Drain Source Voltage Vds

40V

Package Type

PQFN

Series

BSZ

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.7mΩ

Channel Mode

N

Maximum Gate Source Voltage Vgs

20V

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1V

Maximum Power Dissipation Pd

81W

Typical Gate Charge Qg @ Vgs

80nC

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

No

Infineon BSZ Series MOSFET, 40V Maximum Drain Source Voltage, 212A Maximum Continuous Drain Current - BSZ024N04LS6ATMA1


This MOSFET is a silicon-based N-channel switching device designed for high-current power applications in surface-mount assemblies. It operates across an extended temperature range and is intended for use where low conduction losses and robust gate handling are required.

Features and Benefits:


• 0.7mΩ Rds(on) reduces conduction losses for high-efficiency operation
• 212A continuous drain current supports heavy current loads
• 40V drain-source rating enables low-voltage power stages
• 81W power dissipation manages thermal stress during high load
• 80nC typical gate charge balances switching speed and drive effort
• 20V gate-source limit provides defined gate protection margin

Applications


• Suitable for motor driver stages requiring high continuous current
• Ideal for DC-DC converter primary or synchronous stages
• Used with power electronics in industrial drive systems
• Can be used for high-current switching in battery management
• Appropriate for surface-mount assemblies needing Compact PQFN packages

What package type is used for thermal and PCB mounting?


It is supplied in a PQFN package optimised for surface mounting and heat transfer.

What environmental temperature range can it withstand during operation?


It functions across temperatures from −55°C up to 175°C for wide-range deployments.

How does the device handle gate drive requirements?


The gate requires drive compatible with an 80nC typical gate charge and must not exceed a 20V Vgs limit.

Is the device compliant with common electronic materials directives?


It conforms to RoHS requirements restricting certain hazardous substances.

How many electrical connections does the package present for PCB layout?


The device is supplied with an 8-pin configuration for routing and thermal land design.

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