Infineon BSZ Type N-Channel MOSFET, 212 A, 40 V N, 8-Pin PQFN BSZ021N04LS6ATMA1

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HK$20.90

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Per unit
Per Pack*
2 - 8HK$10.45HK$20.90
10 - 98HK$10.15HK$20.30
100 - 248HK$9.85HK$19.70
250 - 498HK$9.55HK$19.10
500 +HK$9.20HK$18.40

*price indicative

Packaging Options:
RS Stock No.:
241-9701
Mfr. Part No.:
BSZ021N04LS6ATMA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

212A

Maximum Drain Source Voltage Vds

40V

Package Type

PQFN

Series

BSZ

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.7mΩ

Channel Mode

N

Forward Voltage Vf

1V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

81W

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

80nC

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

No

The Infineon OptiMOS 6 Power Transistor is a N channel MOSFET which has very low on-resistance. It is qualified according to JEDEC for target applications.

Halogen-free according to IEC61249-2-21

100% avalanche tested

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