Microchip MSC080SMA120B4 N-Channel MOSFET, 140 A, 12 V, 4-Pin TO-247
- RS Stock No.:
- 241-9269P
- Mfr. Part No.:
- MSC080SMA120B4
- Manufacturer:
- Microchip
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Units | Per unit | Saving |
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- RS Stock No.:
- 241-9269P
- Mfr. Part No.:
- MSC080SMA120B4
- Manufacturer:
- Microchip
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Microchip | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 140A | |
| Maximum Drain Source Voltage Vds | 12V | |
| Package Type | TO-247 | |
| Series | MSC080SMA120B4 | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 8Ω | |
| Typical Gate Charge Qg @ Vgs | 64nC | |
| Maximum Power Dissipation Pd | 1.6W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 2V | |
| Forward Voltage Vf | 1.8V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Microchip | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 140A | ||
Maximum Drain Source Voltage Vds 12V | ||
Package Type TO-247 | ||
Series MSC080SMA120B4 | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 8Ω | ||
Typical Gate Charge Qg @ Vgs 64nC | ||
Maximum Power Dissipation Pd 1.6W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 2V | ||
Forward Voltage Vf 1.8V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Microchip silicon carbide power MOSFET product line from Micro semi increases the performance over silicon MOSFET and silicon IGBT solutions while lowering the total cost of ownership for high voltage applications.
Low capacitances and low gate charge
Fast switching speed due to low internal gate resistance
Stable operation at high junction temperature TJ(max) equal to 175 °C
Fast and reliable body diode
Superior avalanche ruggedness
RoHS compliant
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