Microchip MSC025SMA120B N-Channel MOSFET, 140 A, 12 V TO-247
- RS Stock No.:
- 241-9253P
- Mfr. Part No.:
- MSC025SMA120B
- Manufacturer:
- Microchip
The image is for reference only, please refer to product details and specifications
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HK$1,530.20
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In Stock
- 266 unit(s) ready to ship from another location
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Units | Per unit |
|---|---|
| 5 - 9 | HK$306.04 |
| 10 - 99 | HK$299.96 |
| 100 + | HK$293.96 |
*price indicative
- RS Stock No.:
- 241-9253P
- Mfr. Part No.:
- MSC025SMA120B
- Manufacturer:
- Microchip
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Microchip | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 140A | |
| Maximum Drain Source Voltage Vds | 12V | |
| Series | MSC025SMA120B | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Maximum Drain Source Resistance Rds | 8Ω | |
| Maximum Gate Source Voltage Vgs | 2V | |
| Forward Voltage Vf | 1.8V | |
| Typical Gate Charge Qg @ Vgs | 232nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 1.6W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Microchip | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 140A | ||
Maximum Drain Source Voltage Vds 12V | ||
Series MSC025SMA120B | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Maximum Drain Source Resistance Rds 8Ω | ||
Maximum Gate Source Voltage Vgs 2V | ||
Forward Voltage Vf 1.8V | ||
Typical Gate Charge Qg @ Vgs 232nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 1.6W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Microchip silicon carbide power MOSFET product line from Micro semi increases the performance over silicon MOSFET and silicon IGBT solutions while lowering the total cost of ownership for high voltage applications.
Low capacitances and low gate charge
Fast switching speed due to low internal gate resistance
Stable operation at high junction temperature TJ(max)equal to 175 °C
Fast and reliable body diode
Superior avalanche ruggedness
RoHS compliant
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