Infineon IQE N-Channel MOSFET, 253 A, 30 V, 8-Pin PQFN
- RS Stock No.:
- 240-6637
- Mfr. Part No.:
- IQE050N08NM5CGATMA1
- Manufacturer:
- Infineon
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Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
- RS Stock No.:
- 240-6637
- Mfr. Part No.:
- IQE050N08NM5CGATMA1
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 253A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | PQFN | |
| Series | IQE | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.85mΩ | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 16V | |
| Maximum Power Dissipation Pd | 81W | |
| Forward Voltage Vf | 0.73V | |
| Maximum Operating Temperature | 150°C | |
| Length | 3.3mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 253A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type PQFN | ||
Series IQE | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.85mΩ | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 16V | ||
Maximum Power Dissipation Pd 81W | ||
Forward Voltage Vf 0.73V | ||
Maximum Operating Temperature 150°C | ||
Length 3.3mm | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
The Infineon OptiMOSTM 5 80V PQFN 3.3x3.3 Source-Down features 80 V and low RDS(on) of 5.0 mOhm. It offers several advantages, such as increased thermal capability, advanced power density or improved layout possibilities. Furthermore, the higher efficiency, the reduced active cooling requirements and the effective layout for thermal management are benefits at the system level.
Improved PCB losses
Enabling highest power density and performance
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