Infineon IQE Type N-Channel MOSFET, 253 A, 30 V, 8-Pin PQFN IQE006NE2LM5CGATMA1

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HK$36.40

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2 - 8HK$18.20HK$36.40
10 - 98HK$17.80HK$35.60
100 - 248HK$17.40HK$34.80
250 - 498HK$17.00HK$34.00
500 +HK$16.65HK$33.30

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Packaging Options:
RS Stock No.:
242-0307
Mfr. Part No.:
IQE006NE2LM5CGATMA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

253A

Maximum Drain Source Voltage Vds

30V

Package Type

PQFN

Series

IQE

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

1.2mΩ

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

80nC

Maximum Power Dissipation Pd

81W

Forward Voltage Vf

0.73V

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Length

3.3mm

Automotive Standard

AEC-Q101

The Infineon OptiMOS 5 power transistor is a N channel MOSFET which has Pb-free lead plating and is RoHS compliant. It is 100% avalanche tested.

Halogen-free according to IEC61249-2-21

Fully qualified according to JEDEC for Industrial Applications

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