Vishay EF Type N-Channel Power MOSFET, 26 A, 650 V Depletion, 4-Pin PowerPAK 8 x 8
- RS Stock No.:
- 239-8631
- Mfr. Part No.:
- SiHH105N60EF-T1GE3
- Manufacturer:
- Vishay
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HK$77,205.00
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Units | Per unit | Per Reel* |
|---|---|---|
| 3000 - 12000 | HK$25.735 | HK$77,205.00 |
| 15000 + | HK$25.22 | HK$75,660.00 |
*price indicative
- RS Stock No.:
- 239-8631
- Mfr. Part No.:
- SiHH105N60EF-T1GE3
- Manufacturer:
- Vishay
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | Power MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 26A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | EF | |
| Package Type | PowerPAK 8 x 8 | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 0.091Ω | |
| Channel Mode | Depletion | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 174W | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Typical Gate Charge Qg @ Vgs | 33nC | |
| Maximum Operating Temperature | +150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type Power MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 26A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series EF | ||
Package Type PowerPAK 8 x 8 | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 0.091Ω | ||
Channel Mode Depletion | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 174W | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 30V | ||
Typical Gate Charge Qg @ Vgs 33nC | ||
Maximum Operating Temperature +150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
Vishay Series EF Power MOSFET, 650V Drain Source Voltage, 26A Continuous Drain Current - SiHH105N60EF-T1GE3
This power MOSFET is a high-voltage, N‑channel device intended for switching and power-conversion roles in automotive and industrial electronics. It operates across a wide temperature span and is designed as a surface‑mount component for Compact assemblies, providing robust high-voltage switching where thermal endurance and automotive qualification are required.
Features and Benefits:
• 650V drain voltage enables high-voltage switching applications • 26A continuous drain current supports sustained load currents • 0.091Ω low Rds(on) reduces conduction losses in switching stages • 174W power dissipation allows higher power handling in Compact layouts • 33nC typical gate charge facilitates controlled gate‑drive energy • ±30V gate tolerance accommodates varied gate‑drive voltages
Applications
• Suitable for automotive power converters and traction systems • Ideal for high-voltage switch‑mode power supplies in industrial automation • Used for inverter stages in motor‑drive • Can be used for primary‑side switching in SMPS topologies
What thermal range can this device tolerate during operation?
It is rated to operate from -55°C up to +150°C, allowing use in environments with large temperature variations.
How does the pin count and mounting affect PCB layout?
The four‑pin surface‑mount PowerPAK 8x8 package simplifies thermal routing and allows low‑inductance connections for high‑speed switching.
What gate‑drive considerations are necessary for reliable switching?
Gate drive should respect the ±30V maximum Vgs and be designed to manage the 33nC gate charge to control switching speed and minimise EMI.
Is the device suitable for automotive qualification requirements?
It complies with the AEC‑Q101 standard and is RoHS compliant, meeting typical automotive component acceptance criteria.
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