Vishay EF Type N-Channel MOSFET, 46 A, 650 V Depletion, 3-Pin TO-263 SIHB055N60EF-GE3
- RS Stock No.:
- 239-8627
- Mfr. Part No.:
- SIHB055N60EF-GE3
- Manufacturer:
- Vishay
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Subtotal (1 unit)*
HK$53.20
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Last RS stock
- Final 992 unit(s), ready to ship from another location
Units | Per unit |
|---|---|
| 1 - 9 | HK$53.20 |
| 10 - 24 | HK$52.20 |
| 25 - 99 | HK$51.30 |
| 100 - 499 | HK$50.30 |
| 500 + | HK$49.50 |
*price indicative
- RS Stock No.:
- 239-8627
- Mfr. Part No.:
- SIHB055N60EF-GE3
- Manufacturer:
- Vishay
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 46A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | EF | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.05Ω | |
| Channel Mode | Depletion | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 63nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 278W | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Operating Temperature | 125°C | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 46A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series EF | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.05Ω | ||
Channel Mode Depletion | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 63nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 278W | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Operating Temperature 125°C | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
The Vishay EF series is power MOSFET With fast body Diode. This MOSFET used for server and telecom power supply, welding, and motor drives.
4th generation E series technology
Low effective capacitance
Low switching and conduction losses
Related links
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