Vishay Type N-Channel MOSFET, 415 A, 100 V Depletion, 8-Pin PowerPAK SO-8DC

The image is for reference only, please refer to product details and specifications

Bulk discount available

Subtotal (1 reel of 3000 units)*

HK$81,867.00

Add to Basket
Select or type quantity
In Stock
  • Plus 3,000 unit(s) shipping from 23 February 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Reel*
3000 - 12000HK$27.289HK$81,867.00
15000 +HK$24.56HK$73,680.00

*price indicative

RS Stock No.:
239-8614
Mfr. Part No.:
SiDR220EP-T1-RE3
Manufacturer:
Vishay
Find similar products by selecting one or more attributes.
Select all

Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

415A

Maximum Drain Source Voltage Vds

100V

Package Type

PowerPAK SO-8DC

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.00082Ω

Channel Mode

Depletion

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

1.2V

Maximum Power Dissipation Pd

120W

Typical Gate Charge Qg @ Vgs

46.1nC

Maximum Operating Temperature

125°C

Length

6.15mm

Standards/Approvals

No

Width

5.15 mm

Automotive Standard

AEC-Q101

The Vishay TrenchFET® is Gen IV power N-Channel MOSFET which operates at 25 V and 175 °C temperature. This MOSFET used for high power density, synchronous buck converter and load switching.

Top side cooling feature provides additional venue for thermal transfer

Low power loss

UIS tested

Related links

Recently viewed