Vishay Type N-Channel MOSFET, 90.5 A, 100 V Depletion, 8-Pin PowerPAK SO-8DC SIDR104AEP-T1-RE3
- RS Stock No.:
- 239-8613
- Mfr. Part No.:
- SIDR104AEP-T1-RE3
- Manufacturer:
- Vishay
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 pack of 2 units)*
HK$52.50
FREE delivery for orders over HK$250.00
In Stock
- Plus 6,044 unit(s) shipping from 23 February 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 48 | HK$26.25 | HK$52.50 |
| 50 - 98 | HK$25.75 | HK$51.50 |
| 100 - 248 | HK$25.25 | HK$50.50 |
| 250 - 998 | HK$24.80 | HK$49.60 |
| 1000 + | HK$24.40 | HK$48.80 |
*price indicative
- RS Stock No.:
- 239-8613
- Mfr. Part No.:
- SIDR104AEP-T1-RE3
- Manufacturer:
- Vishay
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 90.5A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | PowerPAK SO-8DC | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.0021Ω | |
| Channel Mode | Depletion | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 46.1nC | |
| Maximum Power Dissipation Pd | 120W | |
| Maximum Operating Temperature | 125°C | |
| Length | 6.15mm | |
| Standards/Approvals | No | |
| Width | 5.15 mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 90.5A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type PowerPAK SO-8DC | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.0021Ω | ||
Channel Mode Depletion | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 46.1nC | ||
Maximum Power Dissipation Pd 120W | ||
Maximum Operating Temperature 125°C | ||
Length 6.15mm | ||
Standards/Approvals No | ||
Width 5.15 mm | ||
Automotive Standard AEC-Q101 | ||
The Vishay TrenchFET® is Gen IV power N-Channel MOSFET which operates at 100 V and 175°C temperature. This MOSFET used for power supply, motor drive control and synchronous rectification.
Very low resistance
UIS tested
Related links
- Vishay Type N-Channel MOSFET 100 V Depletion, 8-Pin PowerPAK SO-8DC
- Vishay Type N-Channel MOSFET 100 V Depletion, 8-Pin PowerPAK SO-8DC
- Vishay Type N-Channel MOSFET 100 V Depletion, 8-Pin PowerPAK SO-8DC
- Vishay Type N-Channel MOSFET 100 V Depletion, 8-Pin PowerPAK SO-8DC SiDR626LEP-T1-RE3
- Vishay Type N-Channel MOSFET 100 V Depletion, 8-Pin PowerPAK SO-8DC SiDR220EP-T1-RE3
- Vishay Type N-Channel MOSFET 30 V Depletion, 8-Pin PowerPAK SO-8DC
- Vishay Type N-Channel MOSFET 30 V Depletion, 8-Pin PowerPAK SO-8DC
- Vishay Type N-Channel MOSFET 30 V Depletion, 8-Pin PowerPAK SO-8DC