Infineon SIPMOS® N-Channel MOSFET, 21 mA, 600 V Depletion, 3-Pin SOT-23 BSS126IXTSA1
- RS Stock No.:
- 236-4398
- Mfr. Part No.:
- BSS126IXTSA1
- Manufacturer:
- Infineon
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Subtotal (1 pack of 10 units)*
HK$18.10
FREE delivery for orders over HK$250.00
- 4,190 unit(s) ready to ship from another location
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 10 | HK$1.81 | HK$18.10 |
| 20 - 90 | HK$1.77 | HK$17.70 |
| 100 - 240 | HK$1.74 | HK$17.40 |
| 250 - 490 | HK$1.72 | HK$17.20 |
| 500 + | HK$1.67 | HK$16.70 |
*price indicative
- RS Stock No.:
- 236-4398
- Mfr. Part No.:
- BSS126IXTSA1
- Manufacturer:
- Infineon
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 21mA | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | SIPMOS® | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 700Ω | |
| Channel Mode | Depletion | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 1.4nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 0.5W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Width | 1.4mm | |
| Length | 3mm | |
| Height | 1.1mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 21mA | ||
Maximum Drain Source Voltage Vds 600V | ||
Series SIPMOS® | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 700Ω | ||
Channel Mode Depletion | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 1.4nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 0.5W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Width 1.4mm | ||
Length 3mm | ||
Height 1.1mm | ||
Automotive Standard No | ||
Infineon SIPMOS® Series MOSFET, 600V Maximum Drain Source Voltage, 0.5W Maximum Power Dissipation - BSS126IXTSA1
Features and Benefits:
• Maximum continuous drain current 21 mA supports low-power circuits
• Maximum drain-source resistance 700 Ω limits on-state conduction
• Forward voltage 1.2 V reduces voltage drop in driven paths
• Typical gate charge 1.4 nC allows modest gate-drive energy
• Maximum power dissipation 0.5 W suits low-power thermal budgets
Applications
• Ideal for low-current protection circuits and bleeder resistors
• Used with small-signal drivers requiring depletion-mode behaviour
• Can be used for current steering in sensor front-ends
• Appropriate for Compact power-management subcircuits in converters
What gate voltage range can be applied safely?
What thermal range will the device tolerate during use?
How is the component packaged for PCB assembly?
What mechanical envelope should be allowed on the PCB footprint?
Does the device meet automotive-grade classification?
Related links
- Infineon SIPMOS® Type N-Channel MOSFET 600 V Depletion, 3-Pin SOT-23 BSS126IXTSA1
- Infineon SIPMOS Type N-Channel MOSFET 600 V Depletion, 3-Pin SOT-23 BSS126H6327XTSA2
- Infineon SIPMOS Type N-Channel MOSFET 600 V Depletion, 3-Pin SOT-23
- Infineon BSS127I Type N-Channel MOSFET 600 V Enhancement, 3-Pin SOT-23 BSS127IXTSA1
- Infineon SIPMOS Type N-Channel MOSFET 600 V Enhancement, 3-Pin SOT-23 BSS127H6327XTSA2
- Infineon BSS127I Type N-Channel MOSFET 600 V Enhancement, 3-Pin SOT-23
- Infineon SIPMOS Type N-Channel MOSFET 600 V Depletion, 4-Pin SOT-223 BSP135H6327XTSA1
- Infineon SIPMOS Type N-Channel MOSFET 600 V Depletion, 4-Pin SOT-223
