Infineon SIPMOS® N-Channel MOSFET, 21 mA, 600 V Depletion, 3-Pin SOT-23 BSS126IXTSA1

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HK$1,803.00

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3000 - 3000HK$0.601HK$1,803.00
6000 - 6000HK$0.571HK$1,713.00
9000 +HK$0.543HK$1,629.00

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RS Stock No.:
236-4397
Mfr. Part No.:
BSS126IXTSA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

N

Product Type

MOSFET

Maximum Continuous Drain Current Id

21mA

Maximum Drain Source Voltage Vds

600V

Package Type

SOT-23

Series

SIPMOS®

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

700Ω

Channel Mode

Depletion

Maximum Power Dissipation Pd

0.5W

Typical Gate Charge Qg @ Vgs

1.4nC

Forward Voltage Vf

1.2V

Maximum Gate Source Voltage Vgs

20V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Width

1.4mm

Standards/Approvals

No

Length

3mm

Height

1.1mm

Automotive Standard

No

Infineon SIPMOS® Series MOSFET, 600V Maximum Drain Source Voltage, 0.5W Maximum Power Dissipation - BSS126IXTSA1


This MOSFET is a small-signal, N-channel depletion-mode transistor designed for surface-mounted electronics requiring high-voltage switching in Compact footprints. It operates across a wide temperature range and is intended for low-current applications where a depletion-mode device is preferred to provide normally-on behaviour and simplified gate control.

Features and Benefits:


• Maximum drain-source voltage 600 V enables high-voltage switching
• Maximum continuous drain current 21 mA supports low-power circuits
• Maximum drain-source resistance 700 Ω limits on-state conduction
• Forward voltage 1.2 V reduces voltage drop in driven paths
• Typical gate charge 1.4 nC allows modest gate-drive energy
• Maximum power dissipation 0.5 W suits low-power thermal budgets

Applications


• Suitable for high-voltage biasing networks in analogue designs
• Ideal for low-current protection circuits and bleeder resistors
• Used with small-signal drivers requiring depletion-mode behaviour
• Can be used for current steering in sensor front-ends
• Appropriate for Compact power-management subcircuits in converters

What gate voltage range can be applied safely?


A gate-to-source potential up to 20 V is permissible for normal operation.

What thermal range will the device tolerate during use?


It is rated to function between −55 °C and 150 °C for varied environments.

How is the component packaged for PCB assembly?


It is supplied in a SOT-23 surface-mount package suitable for automated placement.

What mechanical envelope should be allowed on the PCB footprint?


The package measures approximately 3 mm length, 1.4 mm width and 1.1 mm height for land-pattern planning.

Does the device meet automotive-grade classification?


It is not specified as an automotive-standard component and should not be assumed to meet those criteria.

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