Toshiba Type N-Channel MOSFET, 168 A, 75 V, 8-Pin SOP TPH2R608NH,L1Q(M
- RS Stock No.:
- 236-3629
- Mfr. Part No.:
- TPH2R608NH,L1Q(M
- Manufacturer:
- Toshiba
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Bulk discount available
Subtotal (1 pack of 5 units)*
HK$65.70
FREE delivery for orders over HK$250.00
Temporarily out of stock
- 5,000 unit(s) shipping from 18 June 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | HK$13.14 | HK$65.70 |
| 50 - 495 | HK$12.80 | HK$64.00 |
| 500 - 995 | HK$12.48 | HK$62.40 |
| 1000 - 2495 | HK$12.18 | HK$60.90 |
| 2500 + | HK$11.88 | HK$59.40 |
*price indicative
- RS Stock No.:
- 236-3629
- Mfr. Part No.:
- TPH2R608NH,L1Q(M
- Manufacturer:
- Toshiba
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Toshiba | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 168A | |
| Maximum Drain Source Voltage Vds | 75V | |
| Package Type | SOP | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 2.6mΩ | |
| Typical Gate Charge Qg @ Vgs | 72nC | |
| Forward Voltage Vf | -1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 2.5W | |
| Maximum Operating Temperature | 150°C | |
| Height | 0.95mm | |
| Width | 5 mm | |
| Length | 6mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Toshiba | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 168A | ||
Maximum Drain Source Voltage Vds 75V | ||
Package Type SOP | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 2.6mΩ | ||
Typical Gate Charge Qg @ Vgs 72nC | ||
Forward Voltage Vf -1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 2.5W | ||
Maximum Operating Temperature 150°C | ||
Height 0.95mm | ||
Width 5 mm | ||
Length 6mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Toshiba MOSFET made up of the silicon material and having N channel MOS type. It is mainly used in high efficiency DC-DC converters and switching voltage regulators applications.
High speed switching
Related links
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