Specifications

Product overview and Technical data sheets

Legislation and Compliance

Product Details

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Select all	Attribute	Value
	Brand	Toshiba
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	93A
	Maximum Drain Source Voltage Vds	100V
	Package Type	SOP
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	4.5mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	58nC
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	78W
	Maximum Gate Source Voltage Vgs	20 V
	Forward Voltage Vf	-1.2V
	Maximum Operating Temperature	150°C
	Height	0.95mm
	Length	5mm
	Width	5 mm
	Standards/Approvals	No
	Automotive Standard	No

	Select all
	Brand Toshiba
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 93A
	Maximum Drain Source Voltage Vds 100V
	Package Type SOP
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 4.5mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 58nC
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 78W
	Maximum Gate Source Voltage Vgs 20 V
	Forward Voltage Vf -1.2V
	Maximum Operating Temperature 150°C
	Height 0.95mm
	Length 5mm
	Width 5 mm
	Standards/Approvals No
	Automotive Standard No

RoHS Status: Not Applicable

DC-DC Converters

Switching Voltage Regulators

Motor Drivers

Small, thin package

High-speed switching

Small gate charge: QSW = 22 nC (typ.)

Low drain-source on-resistance: RDS(ON) = 3.7 mΩ (typ.) (VGS = 10 V)

Low leakage current: IDSS = 10 μA (max) (VDS = 100 V)

Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1.0 mA)

Toshiba Type N-Channel MOSFET, 93 A, 100 V Enhancement, 8-Pin SOP

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