Toshiba Type P-Channel MOSFET, 6 A, 12 V, 3-Pin SOT-23 SSM3J338R,LF(T

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Subtotal (1 pack of 50 units)*

HK$577.20

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  • 200 unit(s) ready to ship from another location
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Units
Per unit
Per Pack*
50 - 50HK$11.544HK$577.20
100 - 200HK$11.198HK$559.90
250 - 450HK$10.862HK$543.10
500 - 950HK$10.644HK$532.20
1000 +HK$10.432HK$521.60

*price indicative

Packaging Options:
RS Stock No.:
236-3569
Mfr. Part No.:
SSM3J338R,LF(T
Manufacturer:
Toshiba
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Brand

Toshiba

Product Type

MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

6A

Maximum Drain Source Voltage Vds

12V

Package Type

SOT-23

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

26.3mΩ

Maximum Power Dissipation Pd

2W

Maximum Gate Source Voltage Vgs

10 V

Forward Voltage Vf

0.75V

Typical Gate Charge Qg @ Vgs

19.5nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

No

Length

2.4mm

Height

0.8mm

Width

2.9 mm

Automotive Standard

No

The Toshiba field effect transistor MADE up of the silicon material and having P channel MOS type. It is mainly used in power management switching applications.

Storage temperature range −55 to 150 °C

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