Toshiba Type P-Channel MOSFET, 2 A, 60 V, 3-Pin SOT-23 SSM3J356R,LF(T

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HK$82.30

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  • Plus 200 unit(s) shipping from 23 February 2026
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Units
Per unit
Per Pack*
50 - 50HK$1.646HK$82.30
100 - 200HK$1.616HK$80.80
250 - 450HK$1.586HK$79.30
500 - 950HK$1.558HK$77.90
1000 +HK$1.53HK$76.50

*price indicative

Packaging Options:
RS Stock No.:
236-3573
Mfr. Part No.:
SSM3J356R,LF(T
Manufacturer:
Toshiba
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Brand

Toshiba

Channel Type

Type P

Product Type

MOSFET

Maximum Continuous Drain Current Id

2A

Maximum Drain Source Voltage Vds

60V

Package Type

SOT-23

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

400mΩ

Forward Voltage Vf

0.9V

Typical Gate Charge Qg @ Vgs

8.3nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

2W

Maximum Gate Source Voltage Vgs

-20 V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Height

0.8mm

Width

2.9 mm

Length

2.4mm

Automotive Standard

No

The Toshiba field effect transistor made up of the silicon material and having P channel MOS type. It is mainly used in power management switching applications.

Storage temperature range −55 to 150 °C

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