Infineon ISC N-Channel MOSFET, 192 A, 100 V, 8-Pin TDSON ISC027N10NM6ATMA1
- RS Stock No.:
- 235-4865
- Mfr. Part No.:
- ISC027N10NM6ATMA1
- Manufacturer:
- Infineon
The image is for reference only, please refer to product details and specifications
Bulk discount available
View bulk pricing optionsSubtotal (2 units, in packs of 2)*
HK$87.30
FREE delivery for orders over HK$250.00
Temporarily out of stock
- 5,000 unit(s) shipping from 01 October 2026
- Plus 5,000 unit(s) shipping from 11 March 2027
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 8 | HK$43.65 | HK$87.30 |
| 10 - 98 | HK$42.85 | HK$85.70 |
| 100 - 248 | HK$41.90 | HK$83.80 |
| 250 - 498 | HK$41.15 | HK$82.30 |
| 500 + | HK$40.20 | HK$80.40 |
*price indicative
- RS Stock No.:
- 235-4865
- Mfr. Part No.:
- ISC027N10NM6ATMA1
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 192A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | ISC | |
| Package Type | TDSON | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 2.24mΩ | |
| Maximum Power Dissipation Pd | 245W | |
| Forward Voltage Vf | 1V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 91nC | |
| Maximum Operating Temperature | 175°C | |
| Height | 5.1mm | |
| Length | 6.1mm | |
| Width | 1.1mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 192A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series ISC | ||
Package Type TDSON | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 2.24mΩ | ||
Maximum Power Dissipation Pd 245W | ||
Forward Voltage Vf 1V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 91nC | ||
Maximum Operating Temperature 175°C | ||
Height 5.1mm | ||
Length 6.1mm | ||
Width 1.1mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
Infineon ISC Series MOSFET, 100V Maximum Drain Source Voltage, 245W Maximum Power Dissipation - ISC027N10NM6ATMA1
This MOSFET is a high-current switching transistor designed for power conversion and motor-drive environments, offering robust operation across a wide temperature range and a surface-mount footprint suited to Compact assemblies. It provides low conduction loss and substantial current handling for demanding applications where voltage blocking and gate control are critical.
Features and Benefits:
• 100 V drain rating enables high-voltage switching capability
• 192 A continuous drain current supports heavy-load operation
• 2.24 mΩ Rds(on) minimises conduction losses for efficiency
• 245 W power dissipation allows sustained power handling
• 91 nC typical gate charge balances drive requirements and switching speed
• 20 V gate-source rating permits wide gate drive headroom
• 192 A continuous drain current supports heavy-load operation
• 2.24 mΩ Rds(on) minimises conduction losses for efficiency
• 245 W power dissipation allows sustained power handling
• 91 nC typical gate charge balances drive requirements and switching speed
• 20 V gate-source rating permits wide gate drive headroom
Applications
• Suitable as a 100 V, 192 A power MOSFET for motor-drive
• Ideal for high-current DC-DC converters in Compact systems
• Used with battery management and traction inverter stages
• Can be used for power stages requiring low Rds(on) MOSFETs with 245 W power dissipation
• Suitable for high-temperature MOSFET environments from −55 °C to 175 °C
• Ideal for high-current DC-DC converters in Compact systems
• Used with battery management and traction inverter stages
• Can be used for power stages requiring low Rds(on) MOSFETs with 245 W power dissipation
• Suitable for high-temperature MOSFET environments from −55 °C to 175 °C
What mounting style is used for this component?
It is supplied in an 8‑pin TDSON surface-mount package designed for board-level assembly.
What thermal extremes can this device tolerate during operation?
The operational range extends from −55 °C up to 175 °C, allowing use in elevated-temperature conditions.
What is the forward voltage characteristic during conduction?
The forward voltage Vf is specified at 1 V under conduction conditions.
How many pins does this package present for PCB layout considerations?
The device has an 8‑pin configuration for thermal and electrical termination.
Related links
- Infineon ISC Type N-Channel MOSFET 100 V, 8-Pin TDSON ISC027N10NM6ATMA1
- Infineon ISC Type N-Channel MOSFET 100 V, 8-Pin TDSON ISC080N10NM6ATMA1
- Infineon ISC Type N-Channel MOSFET 40 V, 8-Pin TDSON-8 FL ISC017N04NM5ATMA1
- Infineon ISC Type N-Channel MOSFET 40 V, 8-Pin TDSON-8 FL ISC019N04NM5ATMA1
- Infineon ISC Type N-Channel MOSFET 40 V, 8-Pin TDSON-8 FL ISC028N04NM5ATMA1
- Infineon ISC Type N-Channel MOSFET 40 V, 8-Pin TDSON-8 FL ISC036N04NM5ATMA1
- Infineon ISC Type N-Channel MOSFET 40 V, 8-Pin TDSON-8 FL ISC058N04NM5ATMA1
- Infineon ISC Type N-Channel MOSFET 100 V, 8-Pin TDSON ISC230N10NM6ATMA1