Infineon ISC N-Channel MOSFET, 75 A, 100 V, 8-Pin TDSON ISC080N10NM6ATMA1
- RS Stock No.:
- 235-4870
- Mfr. Part No.:
- ISC080N10NM6ATMA1
- Manufacturer:
- Infineon
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Units | Per unit | Per Reel* |
|---|---|---|
| 5000 - 5000 | HK$6.591 | HK$32,955.00 |
| 10000 - 10000 | HK$6.459 | HK$32,295.00 |
| 15000 + | HK$6.265 | HK$31,325.00 |
*price indicative
- RS Stock No.:
- 235-4870
- Mfr. Part No.:
- ISC080N10NM6ATMA1
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 75A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | TDSON | |
| Series | ISC | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 8.05mΩ | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 24nC | |
| Maximum Power Dissipation Pd | 100W | |
| Forward Voltage Vf | 1V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Width | 1.2mm | |
| Standards/Approvals | No | |
| Height | 5.35mm | |
| Length | 6.1mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 75A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type TDSON | ||
Series ISC | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 8.05mΩ | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 24nC | ||
Maximum Power Dissipation Pd 100W | ||
Forward Voltage Vf 1V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Width 1.2mm | ||
Standards/Approvals No | ||
Height 5.35mm | ||
Length 6.1mm | ||
Automotive Standard No | ||
Infineon ISC Series MOSFET, 100V Maximum Drain Source Voltage, 75A Maximum Continuous Drain Current - ISC080N10NM6ATMA1
This MOSFET is a high-current N-channel transistor designed for power switching in Compact surface-mount assemblies. It operates across a wide temperature span and is intended for applications requiring substantial drain current capability and thermal tolerance in board-mounted power stages.
Features and Benefits:
• 100V drain rating enables robust voltage headroom for power stages
• 75A continuous drain current supports high-load switching demands
• 100W power dissipation allows sustained thermal handling under load
• 8.05mΩ Rds(on) minimises conduction losses for efficiency gains
• 24nC typical gate charge permits predictable switching performance
• 20V maximum gate-source voltage provides gate protection margin
• 75A continuous drain current supports high-load switching demands
• 100W power dissipation allows sustained thermal handling under load
• 8.05mΩ Rds(on) minimises conduction losses for efficiency gains
• 24nC typical gate charge permits predictable switching performance
• 20V maximum gate-source voltage provides gate protection margin
Applications
• Suitable for DC-DC converter output stages
• Ideal for high-current synchronous rectification tasks
• Used with motor-drive half-bridges in Compact inverters
• Can be used for power distribution switches on boards
• Suitable for switch-mode power supply primary or secondary stages
• Ideal for high-current synchronous rectification tasks
• Used with motor-drive half-bridges in Compact inverters
• Can be used for power distribution switches on boards
• Suitable for switch-mode power supply primary or secondary stages
What operating temperature range can it tolerate?
It is specified to function from -55°C up to 175°C, allowing use in thermally demanding environments.
What package and mounting style should I plan for?
It is supplied in a TDSON package and intended for surface-mount assembly on PCB lands.
What are the physical footprint constraints?
The package measures 6.1mm in length, 1.2mm in width and 5.35mm in height for layout planning.
How does gate drive requirement affect switching design?
The typical total gate charge of 24nC defines the charge delivery needed from the driver to achieve desired switching speeds.
What channel type and polarity does it employ?
It uses an N-channel configuration suitable for low-side or high-side arrangements where N-channel devices are required.
Related links
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