ROHM Type N-Channel MOSFET, 4 A, 650 V Enhancement, 3-Pin TO-252 R6504KND3TL1

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HK$62.00

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  • 75 unit(s) ready to ship from another location
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Units
Per unit
Per Pack*
5 - 45HK$12.40HK$62.00
50 - 95HK$12.18HK$60.90
100 - 245HK$11.94HK$59.70
250 - 995HK$11.74HK$58.70
1000 +HK$11.52HK$57.60

*price indicative

Packaging Options:
RS Stock No.:
235-2683
Mfr. Part No.:
R6504KND3TL1
Manufacturer:
ROHM
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Brand

ROHM

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

4A

Maximum Drain Source Voltage Vds

650V

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

1.05Ω

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

58W

Typical Gate Charge Qg @ Vgs

15nC

Maximum Operating Temperature

150°C

Width

2.4 mm

Length

6.4mm

Height

10.4mm

Standards/Approvals

No

Automotive Standard

No

The ROHM R6xxxKNx series are high-speed switching products, super Junction MOSFET, that place an emphasis on high efficiency. It achieve higher efficiency via high-speed switching. High-speed switching makes it possible to contribute to higher efficiency in PFC and LLC circuits.

Low on-resistance

Ultra fast switching speed

Parallel use is easy

Pb-free plating

RoHS compliant

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