ROHM Type N-Channel MOSFET, 11 A, 650 V Enhancement, 3-Pin TO-252 R6511END3TL1
- RS Stock No.:
- 235-2694
- Mfr. Part No.:
- R6511END3TL1
- Manufacturer:
- ROHM
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 pack of 5 units)*
HK$127.10
FREE delivery for orders over HK$250.00
Temporarily out of stock
- Shipping from 05 November 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | HK$25.42 | HK$127.10 |
| 50 - 95 | HK$24.96 | HK$124.80 |
| 100 - 245 | HK$24.52 | HK$122.60 |
| 250 - 995 | HK$24.08 | HK$120.40 |
| 1000 + | HK$23.62 | HK$118.10 |
*price indicative
- RS Stock No.:
- 235-2694
- Mfr. Part No.:
- R6511END3TL1
- Manufacturer:
- ROHM
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ROHM | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 11A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 400mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 125W | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 32nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Length | 6.4mm | |
| Height | 10.4mm | |
| Width | 2.4mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand ROHM | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 11A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 400mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 125W | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 32nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Length 6.4mm | ||
Height 10.4mm | ||
Width 2.4mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The ROHM R6xxxENx series are low-noise products, super Junction MOSFET, that place an emphasis on ease-of-use. This series products achieve superior performance for noise-sensitive applications to reduce noise, such as audio and lighting equipment.
Low on-resistance
Fast switching speed
Parallel use is easy
Pb-free plating
RoHS compliant
Related links
- ROHM Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-252 R6511END3TL1
- ROHM Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-252 R6511KND3TL1
- ROHM Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-252 R6509END3TL1
- ROHM Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-252 R6504END3TL1
- ROHM Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-252 R6504KND3TL1
- ROHM Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-252 R6509KND3TL1
- ROHM Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-252 R6507END3TL1
- ROHM Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-252 R6507KND3TL1