ROHM N-Channel MOSFET, 7 A, 650 V Enhancement, 3-Pin TO-252 R6507END3TL1

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Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
RS Stock No.:
235-2685
Mfr. Part No.:
R6507END3TL1
Manufacturer:
ROHM
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Brand

ROHM

Channel Type

N

Product Type

MOSFET

Maximum Continuous Drain Current (Id)

7 A

Maximum Drain Source Voltage (Vds)

650 V

Channel Mode

Enhancement

Pin Count

3

Package Type

TO-252

Automotive Standard

No

Height

10.4 mm

Length

6.4 mm

Maximum Drain Source Resistance (Rds)

665 mΩ

Maximum Gate Source Voltage (Vgs)

20 V

Maximum Operating Temperature

150 °C

Maximum Power Dissipation (Pd)

78 W

Minimum Operating Temperature

-55 °C

Mount Type

Surface

Standards/Approvals

No

Typical Gate Charge (Qg) @ Vgs

20 nC

Width

2.4 mm

The ROHM R6xxxENx series are low-noise products, super Junction MOSFET, that place an emphasis on ease-of-use. This series products achieve superior performance for noise-sensitive applications to reduce noise, such as audio and lighting equipment.

Low on-resistance

Fast switching speed

Parallel use is easy

Pb-free plating

RoHS compliant

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