ROHM Type N-Channel MOSFET, 4 A, 650 V Enhancement, 3-Pin TO-252 R6504END3TL1

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Subtotal (1 pack of 5 units)*

HK$63.80

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Units
Per unit
Per Pack*
5 - 45HK$12.76HK$63.80
50 - 95HK$12.54HK$62.70
100 - 245HK$12.30HK$61.50
250 - 995HK$12.08HK$60.40
1000 +HK$11.86HK$59.30

*price indicative

Packaging Options:
RS Stock No.:
235-2681
Mfr. Part No.:
R6504END3TL1
Manufacturer:
ROHM
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Brand

ROHM

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

4A

Maximum Drain Source Voltage Vds

650V

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

1.05Ω

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

58W

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

15nC

Maximum Operating Temperature

150°C

Height

10.4mm

Standards/Approvals

No

Width

2.4 mm

Length

6.4mm

Automotive Standard

No

The ROHM R6xxxENx series are low-noise products, super Junction MOSFET, that place an emphasis on ease-of-use. This series products achieve superior performance for noise-sensitive applications to reduce noise, such as audio and lighting equipment.

Low on-resistance

Fast switching speed

Parallel use is easy

Pb-free plating

RoHS compliant

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