Infineon OptiMOS 5 Type N-Channel MOSFET, 58 A, 100 V, 8-Pin PQFN ISZ0804NLSATMA1
- RS Stock No.:
- 232-6778
- Mfr. Part No.:
- ISZ0804NLSATMA1
- Manufacturer:
- Infineon
The image is for reference only, please refer to product details and specifications
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Subtotal (1 pack of 5 units)*
HK$54.90
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In Stock
- Plus 4,915 unit(s) shipping from 26 January 2026
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Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 5 | HK$10.98 | HK$54.90 |
| 10 - 95 | HK$10.70 | HK$53.50 |
| 100 - 245 | HK$10.42 | HK$52.10 |
| 250 - 495 | HK$10.18 | HK$50.90 |
| 500 + | HK$9.92 | HK$49.60 |
*price indicative
- RS Stock No.:
- 232-6778
- Mfr. Part No.:
- ISZ0804NLSATMA1
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 58A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | OptiMOS 5 | |
| Package Type | PQFN | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 15.5mΩ | |
| Forward Voltage Vf | 1V | |
| Typical Gate Charge Qg @ Vgs | 24nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 60W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Width | 1.1 mm | |
| Length | 3.4mm | |
| Height | 3.4mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 58A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series OptiMOS 5 | ||
Package Type PQFN | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 15.5mΩ | ||
Forward Voltage Vf 1V | ||
Typical Gate Charge Qg @ Vgs 24nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 60W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Width 1.1 mm | ||
Length 3.4mm | ||
Height 3.4mm | ||
Automotive Standard No | ||
The Infineon's OptiMOS PD power MOSFET 100 V, are designed targeting USB-PD and adapter applications. It's PQFN 3.3x3.3 package offers fast ramp-up and optimized lead times. OptiMOS low-voltage MOSFETs for power delivery enable designs with less parts leading to BOM cost reduction. OptiMOS PD features quality products in compact, lightweight packages.
Logic level availability
Excellent thermal behaviour
100% avalanche tested
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