Infineon OptiMOS 5 Type N-Channel MOSFET, 37 A, 100 V, 8-Pin PQFN ISZ0803NLSATMA1
- RS Stock No.:
- 232-6776
- Mfr. Part No.:
- ISZ0803NLSATMA1
- Manufacturer:
- Infineon
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 pack of 5 units)*
HK$51.70
FREE delivery for orders over HK$250.00
Temporarily out of stock
- 5,000 unit(s) shipping from 26 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 5 | HK$10.34 | HK$51.70 |
| 10 - 95 | HK$10.14 | HK$50.70 |
| 100 - 245 | HK$9.96 | HK$49.80 |
| 250 - 495 | HK$9.80 | HK$49.00 |
| 500 + | HK$9.62 | HK$48.10 |
*price indicative
- RS Stock No.:
- 232-6776
- Mfr. Part No.:
- ISZ0803NLSATMA1
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 37A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | PQFN | |
| Series | OptiMOS 5 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 21.9mΩ | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 43W | |
| Forward Voltage Vf | 1V | |
| Typical Gate Charge Qg @ Vgs | 15nC | |
| Maximum Operating Temperature | 175°C | |
| Height | 3.4mm | |
| Length | 3.4mm | |
| Width | 1.1 mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 37A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type PQFN | ||
Series OptiMOS 5 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 21.9mΩ | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 43W | ||
Forward Voltage Vf 1V | ||
Typical Gate Charge Qg @ Vgs 15nC | ||
Maximum Operating Temperature 175°C | ||
Height 3.4mm | ||
Length 3.4mm | ||
Width 1.1 mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon's OptiMOS PD power MOSFET 100 V, are designed targeting USB-PD and adapter applications. It's PQFN 3.3x3.3 package offers fast ramp-up and optimized lead times. OptiMOS low-voltage MOSFETs for power delivery enable designs with less parts leading to BOM cost reduction. OptiMOS PD features quality products in compact, lightweight packages.
Logic level availability
Excellent thermal behaviour
100% avalanche tested
Related links
- Infineon OptiMOS 5 Type N-Channel MOSFET 100 V, 8-Pin PQFN
- Infineon OptiMOS 5 Type N-Channel MOSFET 100 V, 8-Pin SO-8
- Infineon OptiMOS 5 Type N-Channel MOSFET 100 V, 8-Pin SO-8 ISC0803NLSATMA1
- Infineon OptiMOS 5 Type N-Channel MOSFET 80 V, 8-Pin PQFN
- Infineon OptiMOS 5 Type N-Channel MOSFET 100 V, 8-Pin PQFN
- Infineon OptiMOS 5 Type N-Channel MOSFET 60 V, 8-Pin PQFN
- Infineon OptiMOS 5 Type N-Channel MOSFET 60 V, 8-Pin PQFN
- Infineon OptiMOS 5 Type N-Channel MOSFET 80 V, 8-Pin PQFN ISZ0602NLSATMA1