STMicroelectronics Single RF2L N-Channel MOSFET, 60 V Enhancement, 2-Pin B-2
- RS Stock No.:
- 230-0088P
- Mfr. Part No.:
- RF2L36075CF2
- Manufacturer:
- STMicroelectronics
The image is for reference only, please refer to product details and specifications
Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
- RS Stock No.:
- 230-0088P
- Mfr. Part No.:
- RF2L36075CF2
- Manufacturer:
- STMicroelectronics
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Operating Frequency | 3.5GHz | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | RF2L | |
| Package Type | B-2 | |
| Mount Type | Surface | |
| Pin Count | 2 | |
| Channel Mode | Enhancement | |
| Transistor Configuration | Single | |
| Maximum Operating Temperature | 200°C | |
| Length | 20.57mm | |
| Standards/Approvals | RoHS | |
| Width | 19.44mm | |
| Height | 3.61mm | |
| Automotive Standard | No | |
| Typical Power Gain | 12.5dB | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Operating Frequency 3.5GHz | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Drain Source Voltage Vds 60V | ||
Series RF2L | ||
Package Type B-2 | ||
Mount Type Surface | ||
Pin Count 2 | ||
Channel Mode Enhancement | ||
Transistor Configuration Single | ||
Maximum Operating Temperature 200°C | ||
Length 20.57mm | ||
Standards/Approvals RoHS | ||
Width 19.44mm | ||
Height 3.61mm | ||
Automotive Standard No | ||
Typical Power Gain 12.5dB | ||
The STMicroelectronics RF2L36075CF2 is a 75 W internally matched LDMOS transistor designed for multicarrier WCDMA/PCS/DCS/LTE base stations and S-Band radar applications in the frequency range from 3.1 to 3.6 GHz. It can be used in class AB, B or C for all typical cellular base station modulation formats.
High efficiency and linear gain operations
Integrated ESD protection
Internal input matching for ease of use
Large positive and negative gate-source voltage range for improved class C operation
Excellent thermal stability, low HCI drift
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