Vishay TrenchFET Type N-Channel MOSFET, 51.4 A, 100 V Enhancement, 8-Pin SO-8 SiR876BDP-T1-RE3

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Subtotal (1 pack of 10 units)*

HK$85.60

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Per unit
Per Pack*
10 - 40HK$8.56HK$85.60
50 - 90HK$8.41HK$84.10
100 - 240HK$8.25HK$82.50
250 - 990HK$8.11HK$81.10
1000 +HK$7.96HK$79.60

*price indicative

Packaging Options:
RS Stock No.:
228-2912
Mfr. Part No.:
SiR876BDP-T1-RE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

51.4A

Maximum Drain Source Voltage Vds

100V

Package Type

SO-8

Series

TrenchFET

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

10.8mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

71.4W

Typical Gate Charge Qg @ Vgs

42.7nC

Maximum Operating Temperature

150°C

Standards/Approvals

No

Automotive Standard

No

The Vishay TrenchFET N-channel is 100 V MOSFET.

100 % Rg and UIS tested

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