Vishay TrenchFET Type N-Channel MOSFET, 65 A, 100 V Enhancement, 8-Pin SO-8 SIR668DP-T1-RE3

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HK$23.20

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2 - 748HK$11.60HK$23.20
750 - 1498HK$11.35HK$22.70
1500 +HK$11.10HK$22.20

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Packaging Options:
RS Stock No.:
134-9725
Mfr. Part No.:
SIR668DP-T1-RE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

65A

Maximum Drain Source Voltage Vds

100V

Package Type

SO-8

Series

TrenchFET

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

5.05mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

72nC

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

1.1V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

104W

Maximum Operating Temperature

150°C

Height

1.12mm

Standards/Approvals

No

Width

5.26 mm

Length

6.25mm

Automotive Standard

No

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