N-Channel MOSFET, 65 A, 100 V, 8-Pin PowerPAK SO-8 Vishay SIR668DP-T1-RE3

RS Stock No.:: 134-9725
Mfr. Part No.:: SIR668DP-T1-RE3
Manufacturer:: Vishay

N-Channel MOSFET, 65 A, 100 V, 8-Pin PowerPAK SO-8 Vishay SIR668DP-T1-RE3

Subtotal (1 pack of 2 units)**

HK$28.60

10436 In stock for delivery within 3 working days*

* Delivery dates may change based on your chosen quantity and delivery address.

FREE delivery for orders over HK$850.00

Units	Per unit	Per Pack**
2 - 748	HK$14.30	HK$28.60
750 - 1498	HK$13.95	HK$27.90
1500 +	HK$13.70	HK$27.40

**price indicative

RS Stock No.:: 134-9725
Mfr. Part No.:: SIR668DP-T1-RE3
Manufacturer:: Vishay

SiR668DP, N-Channel 100V MOSFET
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	65 A
Maximum Drain Source Voltage	100 V
Package Type	PowerPAK SO-8
Series	TrenchFET
Mounting Type	Surface Mount
Pin Count	8
Maximum Drain Source Resistance	5.05 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	3.4V
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	104 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Width	5.26mm
Number of Elements per Chip	1
Typical Gate Charge @ Vgs	72 nC @ 10 V
Length	6.25mm
Maximum Operating Temperature	+150 °C
Forward Diode Voltage	1.1V
Height	1.12mm
Minimum Operating Temperature	-55 °C

N-Channel MOSFET, 65 A, 100 V, 8-Pin PowerPAK SO-8 Vishay SIR668DP-T1-RE3

FREE delivery for orders over HK$850.00

N-Channel MOSFET, TrenchFET Gen IV, Vishay Semiconductor