Vishay TrenchFET Type N-Channel MOSFET, 65 A, 100 V Enhancement, 8-Pin SO-8

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Subtotal (1 reel of 3000 units)*

HK$32,454.00

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Units
Per unit
Per Reel*
3000 - 3000HK$10.818HK$32,454.00
6000 - 9000HK$10.602HK$31,806.00
12000 +HK$10.39HK$31,170.00

*price indicative

RS Stock No.:
134-9160
Mfr. Part No.:
SIR668DP-T1-RE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

65A

Maximum Drain Source Voltage Vds

100V

Series

TrenchFET

Package Type

SO-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

5.05mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.1V

Typical Gate Charge Qg @ Vgs

72nC

Maximum Power Dissipation Pd

104W

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

150°C

Height

1.12mm

Length

6.25mm

Standards/Approvals

No

Width

5.26 mm

Automotive Standard

No

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