Vishay TrenchFET Type N-Channel MOSFET, 51.4 A, 100 V Enhancement, 8-Pin SO-8

The image is for reference only, please refer to product details and specifications

Bulk discount available

Subtotal (1 reel of 3000 units)*

HK$13,791.00

Add to Basket
Select or type quantity
Last RS stock
  • Final 21,000 unit(s), ready to ship from another location
Units
Per unit
Per Reel*
3000 - 12000HK$4.597HK$13,791.00
15000 +HK$4.505HK$13,515.00

*price indicative

RS Stock No.:
228-2911
Mfr. Part No.:
SiR876BDP-T1-RE3
Manufacturer:
Vishay
Find similar products by selecting one or more attributes.
Select all

Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

51.4A

Maximum Drain Source Voltage Vds

100V

Series

TrenchFET

Package Type

SO-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

10.8mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

42.7nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

71.4W

Maximum Operating Temperature

150°C

Standards/Approvals

No

Automotive Standard

No

The Vishay TrenchFET N-channel is 100 V MOSFET.

100 % Rg and UIS tested

Related links