Vishay E Type N-Channel MOSFET, 21 A, 850 V Enhancement, 3-Pin TO-247 SIHG24N80AE-GE3
- RS Stock No.:
- 228-2870
- Mfr. Part No.:
- SIHG24N80AE-GE3
- Manufacturer:
- Vishay
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 pack of 2 units)*
HK$66.60
FREE delivery for orders over HK$250.00
Being discontinued
- Final 478 unit(s), ready to ship from another location
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 8 | HK$33.30 | HK$66.60 |
| 10 - 24 | HK$32.70 | HK$65.40 |
| 26 - 98 | HK$32.10 | HK$64.20 |
| 100 - 498 | HK$31.55 | HK$63.10 |
| 500 + | HK$30.95 | HK$61.90 |
*price indicative
- RS Stock No.:
- 228-2870
- Mfr. Part No.:
- SIHG24N80AE-GE3
- Manufacturer:
- Vishay
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 21A | |
| Maximum Drain Source Voltage Vds | 850V | |
| Package Type | TO-247 | |
| Series | E | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 184mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Power Dissipation Pd | 208W | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 59nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 21A | ||
Maximum Drain Source Voltage Vds 850V | ||
Package Type TO-247 | ||
Series E | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 184mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Power Dissipation Pd 208W | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 59nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Vishay E Series Power MOSFET reduced switching and conduction losses.
Low figure-of-merit (FOM) Ron x Qg
Low effective capacitance (Co(er))
Related links
- Vishay E Type N-Channel MOSFET 850 V Enhancement, 3-Pin TO-247
- Vishay E Type N-Channel MOSFET 850 V Enhancement, 3-Pin TO-247
- Vishay E Type N-Channel MOSFET 850 V Enhancement, 3-Pin TO-247 SIHG21N80AEF-GE3
- Vishay E Type N-Channel MOSFET 850 V Enhancement, 3-Pin TO-252
- Vishay E Type N-Channel MOSFET 850 V Enhancement, 3-Pin TO-251
- Vishay E Type N-Channel MOSFET 850 V Enhancement, 3-Pin TO-252
- Vishay E Type N-Channel MOSFET 850 V Enhancement, 3-Pin TO-220
- Vishay E Type N-Channel MOSFET 850 V Enhancement, 3-Pin TO-220