Vishay E Type N-Channel MOSFET, 16.3 A, 850 V Enhancement, 3-Pin TO-247 SIHG21N80AEF-GE3

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Subtotal (1 pack of 2 units)*

HK$65.90

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Units
Per unit
Per Pack*
2 - 8HK$32.95HK$65.90
10 - 24HK$31.90HK$63.80
26 - 98HK$31.00HK$62.00
100 - 498HK$30.05HK$60.10
500 +HK$29.20HK$58.40

*price indicative

Packaging Options:
RS Stock No.:
228-2868
Mfr. Part No.:
SIHG21N80AEF-GE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

16.3A

Maximum Drain Source Voltage Vds

850V

Package Type

TO-247

Series

E

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

250mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

179W

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

47nC

Forward Voltage Vf

1.2V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Automotive Standard

No

The Vishay E Series Power MOSFET reduced switching and conduction losses.

Low figure-of-merit (FOM) Ron x Qg

Low effective capacitance (Co(er))

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