Vishay E Type N-Channel Power MOSFET, 4.4 A, 800 V, 3-Pin TO-220AB SIHP5N80AE-GE3
- RS Stock No.:
- 225-9918
- Mfr. Part No.:
- SIHP5N80AE-GE3
- Manufacturer:
- Vishay
The image is for reference only, please refer to product details and specifications
Subtotal (1 tube of 50 units)*
HK$388.10
FREE delivery for orders over HK$250.00
- 1,050 unit(s) ready to ship from another location
Units | Per unit | Per Tube* |
|---|---|---|
| 50 - 100 | HK$7.762 | HK$388.10 |
| 150 - 200 | HK$7.624 | HK$381.20 |
| 250 + | HK$7.484 | HK$374.20 |
*price indicative
- RS Stock No.:
- 225-9918
- Mfr. Part No.:
- SIHP5N80AE-GE3
- Manufacturer:
- Vishay
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 4.4A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Package Type | TO-220AB | |
| Series | E | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.35Ω | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Typical Gate Charge Qg @ Vgs | 16.5nC | |
| Maximum Power Dissipation Pd | 62.5W | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Height | 15.85mm | |
| Standards/Approvals | RoHS | |
| Width | 4.65mm | |
| Length | 10.52mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 4.4A | ||
Maximum Drain Source Voltage Vds 800V | ||
Package Type TO-220AB | ||
Series E | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.35Ω | ||
Maximum Gate Source Voltage Vgs 30V | ||
Typical Gate Charge Qg @ Vgs 16.5nC | ||
Maximum Power Dissipation Pd 62.5W | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Height 15.85mm | ||
Standards/Approvals RoHS | ||
Width 4.65mm | ||
Length 10.52mm | ||
Automotive Standard No | ||
Vishay Series E Power MOSFET, 800V Drain Source Voltage, 62.5W Maximum Power Dissipation - SIHP5N80AE-GE3
Features and Benefits:
• 4.4A continuous current suits moderate power loads
• 1.35Ω Rds(on) minimises conduction losses under load
• 62.5W maximum dissipation supports elevated power handling
• 16.5nC typical gate charge enables faster gate transitions
• ±30V gate tolerance allows flexible drive voltages
Applications
• Ideal for industrial switch-mode power
• Used with motor drives requiring robust voltage margin
• Can be used for snubber and clamp circuits in HV systems
• Appropriate for laboratory test rigs handling high voltages
What thermal extremes can it withstand during operation?
What package and mounting method does it use for PCB implementation?
How many connection pins are provided and what is the polarity type?
Are there limits on gate drive voltage to avoid damage?
Related links
- Vishay E Type N-Channel Power MOSFET 800 V, 3-Pin TO-220AB SIHP5N80AE-GE3
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- Vishay E Type N-Channel Power MOSFET 800 V Enhancement, 3-Pin TO-220AB
- Vishay E Type N-Channel Power MOSFET 800 V Enhancement, 3-Pin IPAK SIHU5N80AE-GE3
- Vishay E Type N-Channel Power MOSFET 650 V Enhancement, 3-Pin TO-220AB
- Vishay E Type N-Channel Power MOSFET 650 V Enhancement, 3-Pin TO-220AB
- Vishay E Type N-Channel Power MOSFET 800 V Enhancement, 3-Pin TO-220AB SIHP15N80AE-GE3
- Vishay E Type N-Channel MOSFET 800 V, 3-Pin TO-263
