Vishay E Type N-Channel MOSFET, 4.4 A, 800 V, 3-Pin TO-263

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Subtotal (1 tube of 50 units)*

HK$382.90

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Per Tube*
50 - 100HK$7.658HK$382.90
150 - 200HK$7.52HK$376.00
250 +HK$7.384HK$369.20

*price indicative

RS Stock No.:
225-9911
Mfr. Part No.:
SIHB5N80AE-GE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

4.4A

Maximum Drain Source Voltage Vds

800V

Series

E

Package Type

TO-263

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

1.3Ω

Forward Voltage Vf

1.2V

Maximum Power Dissipation Pd

62.5W

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

16.5nC

Maximum Gate Source Voltage Vgs

30 V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Length

10.67mm

Width

9.65 mm

Height

15.88mm

Automotive Standard

No

The Vishay Siliconix maintains Reliability data for Semiconductor Technology and Package Reliability represent a composite of all qualified locations.

Low figure-of-merit (FOM) Ron x Qg

Low effective capacitance (Ciss)

Reduced switching and conduction losses

Ultra low gate charge (Qg)

Avalanche energy rated (UIS)

Integrated Zener diode ESD protection

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