Vishay E Type N-Channel MOSFET, 21 A, 800 V Enhancement, 3-Pin TO-263

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Subtotal (1 tube of 50 units)*

HK$808.50

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Units
Per unit
Per Tube*
50 - 50HK$16.17HK$808.50
100 - 450HK$15.684HK$784.20
500 - 950HK$15.214HK$760.70
1000 +HK$14.758HK$737.90

*price indicative

RS Stock No.:
228-2846
Mfr. Part No.:
SIHB24N80AE-GE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

21A

Maximum Drain Source Voltage Vds

800V

Package Type

TO-263

Series

E

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

184mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

59nC

Maximum Power Dissipation Pd

208W

Maximum Gate Source Voltage Vgs

30 V

Forward Voltage Vf

1.2V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Automotive Standard

No

The Vishay E Series Power MOSFET reduced switching and conduction losses.

Low figure-of-merit (FOM) Ron x Qg

Low effective capacitance (Co(er))

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