Infineon IPP60R N-Channel MOSFET, 26 A, 600 V Enhancement, 3-Pin TO-220

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HK$819.90

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50 - 100HK$16.398HK$819.90
150 - 200HK$15.77HK$788.50
250 +HK$15.568HK$778.40

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RS Stock No.:
222-4928
Mfr. Part No.:
IPP60R120P7XKSA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

N

Maximum Continuous Drain Current Id

26A

Maximum Drain Source Voltage Vds

600V

Series

IPP60R

Package Type

TO-220

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

120mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

36nC

Maximum Power Dissipation Pd

95W

Forward Voltage Vf

0.9V

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20V

Maximum Operating Temperature

150°C

Length

10.36mm

Width

4.57mm

Height

9.45mm

Standards/Approvals

No

Automotive Standard

No

Infineon IPP60R Series MOSFET, 600V Maximum Drain Source Voltage, 26A Maximum Continuous Drain Current - IPP60R120P7XKSA1


This MOSFET is a high-voltage switching transistor designed for power-control applications where elevated voltage tolerance and thermal range are required. It operates as an N-channel enhancement device in a through-hole TO-220 package and is suitable for circuit designs that demand robust gate drive and significant continuous current handling in demanding temperature environments.

Features and Benefits:


• 600 V drain-source voltage enables high-voltage switching capability
• 120 mΩ RDS(on) reduces conduction losses for improved efficiency
• 26 A continuous drain current supports substantial load currents
• 36 nC typical gate charge eases gate-drive sizing for Faster switching
• 95 W maximum power dissipation allows high-power operation
• −55 °C to 150 °C operating range supports wide thermal environments

Applications


• Suitable for high-voltage SMPS primary switching stages
• Ideal for motor-drive half-bridge circuits requiring through-hole mounting
• Used with industrial inverters handling elevated voltages
• Can be used for switch-mode power conversion in bench equipment
• Appropriate for power supplies where robust thermal tolerance is necessary

What is the maximum gate voltage recommended for drive circuitry?


The device accepts gate-source voltages up to 20 V, so gate drivers should be selected to remain within this limit.

How does package choice affect mounting and thermal management?


The TO-220 through-hole package facilitates heatsinking and straightforward PCB mounting for improved thermal dissipation.

What conduction performance can be expected during heavy loads?


With an RDS(on) up to 120 mΩ and continuous drain current of 26 A, conduction losses are quantifiable for thermal-design calculations.

How should switching losses be accounted for in design?


Use the typical gate charge of 36 nC to estimate driver energy per switching event and include the 600 V rating when calculating voltage-related switching losses.

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