Infineon IPP60R Type N-Channel MOSFET, 35 A, 600 V Enhancement, 3-Pin TO-220 IPP60R060C7XKSA1
- RS Stock No.:
- 222-4926
- Mfr. Part No.:
- IPP60R060C7XKSA1
- Manufacturer:
- Infineon
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 pack of 2 units)*
HK$107.60
FREE delivery for orders over HK$250.00
In Stock
- Plus 956 unit(s) shipping from 26 January 2026
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Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 8 | HK$53.80 | HK$107.60 |
| 10 - 98 | HK$52.50 | HK$105.00 |
| 100 - 248 | HK$51.25 | HK$102.50 |
| 250 - 498 | HK$50.00 | HK$100.00 |
| 500 + | HK$48.80 | HK$97.60 |
*price indicative
- RS Stock No.:
- 222-4926
- Mfr. Part No.:
- IPP60R060C7XKSA1
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 35A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | IPP60R | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 60mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 0.9V | |
| Typical Gate Charge Qg @ Vgs | 68nC | |
| Maximum Power Dissipation Pd | 162W | |
| Maximum Operating Temperature | 150°C | |
| Width | 4.57 mm | |
| Length | 10.36mm | |
| Height | 9.45mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 35A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series IPP60R | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 60mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 0.9V | ||
Typical Gate Charge Qg @ Vgs 68nC | ||
Maximum Power Dissipation Pd 162W | ||
Maximum Operating Temperature 150°C | ||
Width 4.57 mm | ||
Length 10.36mm | ||
Height 9.45mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon 600V CoolMOS™ C7 superjunction (SJ) MOSFET series offers a ∼50% reduction in turn-off losses (E oss ) compared to the CoolMOS™ CP, offering an outstanding level of performance in PFC, TTF and other hard-switching topologies. The IPL60R185C7 is also a perfect match for high-power-density charger designs.
Reduced switching loss parameters such as Q G, C oss, E oss
Best-in-class figure of merit Q G*R DS(on)
Increased switching frequency
Best R (on)*A in the world
Rugged body diode
Related links
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