Infineon IMBF1 N-Channel MOSFET, 7.4 A, 1700 V Enhancement, 7-Pin TO-263 IMBF170R650M1XTMA1

The image is for reference only, please refer to product details and specifications

Bulk discount available
View bulk pricing options

Subtotal (2 units, in packs of 2)*

HK$95.60

Add to Basket
Select or type quantity
In Stock
  • 396 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units
Per unit
Per Pack*
2 - 8HK$47.80HK$95.60
10 - 98HK$46.55HK$93.10
100 - 248HK$45.45HK$90.90
250 - 498HK$44.30HK$88.60
500 +HK$43.15HK$86.30

*price indicative

Packaging Options:
RS Stock No.:
222-4851
Mfr. Part No.:
IMBF170R650M1XTMA1
Manufacturer:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Channel Type

N

Product Type

MOSFET

Maximum Continuous Drain Current Id

7.4A

Maximum Drain Source Voltage Vds

1700V

Package Type

TO-263

Series

IMBF1

Mount Type

Surface

Pin Count

7

Maximum Drain Source Resistance Rds

650mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

88W

Maximum Gate Source Voltage Vgs

23V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

+175°C

Standards/Approvals

No

Automotive Standard

No

Infineon IMBF1 Series MOSFET, 1700V Drain Source Voltage, 7.4A Continuous Drain Current - IMBF170R650M1XTMA1


This MOSFET is a high-voltage, N-channel enhancement device intended for power switching in demanding thermal environments. It is supplied in a TO-263 surface-mount package and is designed to handle elevated voltages and moderate continuous currents while operating across a wide temperature range.

Features and Benefits:


• 1700V drain-source rating for high-voltage switching applications
• 650mΩ Rds minimises conduction losses at low to moderate currents
• 88W power dissipation supports significant heat-handling capability
• 7.4A continuous drain current for sustained power delivery
• −55°C to 175°C operation covers harsh thermal environments
• 23V gate tolerance enables robust gate-drive margins

Applications


• Suitable for high-voltage power converters and inverters
• Ideal for industrial motor drive front ends
• Used for switch-mode power supplies in elevated temperature settings
• Can be used for line-side switching in power distribution
• Used with heat-sinking arrangements on surface-mounted boards

What mounting style does this component require?


It is supplied in a TO-263 package intended for surface mounting to a PCB with appropriate thermal land patterns.

What channel type and mode should designers expect?


The device uses an N-channel configuration and operates in enhancement mode for conventional gate-driven switching.

How does ambient temperature affect its suitability?


Its specified operating range from −55°C to 175°C permits use in environments with extreme cold and high thermal stress without derating beyond stated limits.

What is the maximum permitted gate-to-source voltage?


The maximum gate-source voltage is 23V, which defines the allowable gate-drive amplitude for safe operation.

Is this designed to automotive standards?


It is not specified as meeting automotive-grade standards and should not be assumed compliant with automotive qualification requirements.

Related links

Be the first to know about our latest products and offers

Email address

The personal information you provide to us when signing up to this mailing list will be processed in line with the Privacy Policy