Infineon IMBF1 N-Channel MOSFET, 5.2 A, 1700 V Enhancement, 7-Pin TO-263 IMBF170R1K0M1XTMA1
- RS Stock No.:
- 222-4849
- Mfr. Part No.:
- IMBF170R1K0M1XTMA1
- Manufacturer:
- Infineon
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Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 8 | HK$43.35 | HK$86.70 |
| 10 - 98 | HK$42.60 | HK$85.20 |
| 100 - 248 | HK$41.80 | HK$83.60 |
| 250 - 498 | HK$41.05 | HK$82.10 |
| 500 + | HK$40.30 | HK$80.60 |
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- RS Stock No.:
- 222-4849
- Mfr. Part No.:
- IMBF170R1K0M1XTMA1
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 5.2A | |
| Maximum Drain Source Voltage Vds | 1700V | |
| Series | IMBF1 | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 1Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 23V | |
| Maximum Power Dissipation Pd | 68W | |
| Maximum Operating Temperature | +175°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 5.2A | ||
Maximum Drain Source Voltage Vds 1700V | ||
Series IMBF1 | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 1Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 23V | ||
Maximum Power Dissipation Pd 68W | ||
Maximum Operating Temperature +175°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
Infineon IMBF1 Series MOSFET, 1700V Drain Source Voltage, 68W Power Dissipation - IMBF170R1K0M1XTMA1
This MOSFET is a high-voltage semiconductor device designed to control and switch power in surface-mounted assemblies. It operates as an N-channel enhancement-mode transistor, providing controlled conduction between drain and source for power-management applications across a wide temperature range.
Features and Benefits:
• 1700V rating enables operation in high-voltage circuits
• 5.2A continuous current supports moderate load currents
• 68W power dissipation allows sustained thermal handling
• 1Ω drain-source resistance limits conduction losses
• 23V gate tolerance permits substantial gate-drive voltage
• Surface-mount TO-263 package simplifies board assembly
• 5.2A continuous current supports moderate load currents
• 68W power dissipation allows sustained thermal handling
• 1Ω drain-source resistance limits conduction losses
• 23V gate tolerance permits substantial gate-drive voltage
• Surface-mount TO-263 package simplifies board assembly
Applications
• Suitable for high-voltage switching in industrial supplies
• Ideal for power-conversion stages requiring sustained dissipation
• Used with inverter front-ends handling elevated voltages
• Can be used for ruggedised controls across wide temperatures
• Suitable for Compact PCB power modules with surface-mount components
• Ideal for power-conversion stages requiring sustained dissipation
• Used with inverter front-ends handling elevated voltages
• Can be used for ruggedised controls across wide temperatures
• Suitable for Compact PCB power modules with surface-mount components
What temperature extremes can it tolerate during operation?
It is specified to operate from -55°C up to +175°C.
How many pins does the package present for layout planning?
The device is supplied in a 7-pin package for PCB footprint reference.
What mounting method is required for assembly?
It is intended for surface mounting in a TO-263 footprint.
What channel conduction type does it use for switching?
It employs an N-type channel in enhancement mode for controlled switching.
Is it designed to meet automotive standards?
It is not designated as compliant with automotive standards.
Related links
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