Infineon OptiMOS N-Channel MOSFET & Diode, 30 A, 60 V Enhancement, 3-Pin TO-252 IPD30N06S4L23ATMA2
- RS Stock No.:
- 220-7404
- Mfr. Part No.:
- IPD30N06S4L23ATMA2
- Manufacturer:
- Infineon
The image is for reference only, please refer to product details and specifications
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 20 units)*
HK$167.90
FREE delivery for orders over HK$250.00
In Stock
- 340 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 20 - 620 | HK$8.395 | HK$167.90 |
| 640 - 1240 | HK$8.185 | HK$163.70 |
| 1260 + | HK$8.055 | HK$161.10 |
*price indicative
- RS Stock No.:
- 220-7404
- Mfr. Part No.:
- IPD30N06S4L23ATMA2
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET & Diode | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 30A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | TO-252 | |
| Series | OptiMOS | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 23mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 16.1nC | |
| Maximum Gate Source Voltage Vgs | 16V | |
| Maximum Power Dissipation Pd | 36W | |
| Forward Voltage Vf | 1.3V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Width | 6.22mm | |
| Standards/Approvals | No | |
| Length | 6.73mm | |
| Height | 2.41mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET & Diode | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 30A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type TO-252 | ||
Series OptiMOS | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 23mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 16.1nC | ||
Maximum Gate Source Voltage Vgs 16V | ||
Maximum Power Dissipation Pd 36W | ||
Forward Voltage Vf 1.3V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Width 6.22mm | ||
Standards/Approvals No | ||
Length 6.73mm | ||
Height 2.41mm | ||
Automotive Standard AEC-Q101 | ||
Infineon OptiMOS Series MOSFET & Diode, 60V Maximum Drain Source Voltage, 30A Maximum Continuous Drain Current - IPD30N06S4L23ATMA2
This MOSFET & diode is a power switching device designed for high-current applications in demanding electrical environments. It is an N-channel enhancement-mode transistor with an integrated diode, intended for surface-mount deployment in systems requiring robust conduction and thermal tolerance. The component operates across an extended temperature span and is built to meet automotive stress requirements for use in vehicle electronics and industrial controls.
Features and Benefits:
• 60 V rating enables switching of moderate-voltage power rails
• 30 A continuous drain current supports high-current loads
• 23 mΩ Rds(on) minimises conduction losses under load
• 36 W power dissipation allows sustained power handling
• 16.1 nC typical gate charge provides predictable switching behaviour
• 1.3 V forward voltage for efficient diode conduction
• 30 A continuous drain current supports high-current loads
• 23 mΩ Rds(on) minimises conduction losses under load
• 36 W power dissipation allows sustained power handling
• 16.1 nC typical gate charge provides predictable switching behaviour
• 1.3 V forward voltage for efficient diode conduction
Applications
• Suitable for automotive power management modules
• Ideal for DC motor drive stages in vehicles
• Used with high-current converters and regulators
• Can be used for load switching in industrial equipment
• Suitable for surface-mount assemblies requiring thermal endurance
• Ideal for DC motor drive stages in vehicles
• Used with high-current converters and regulators
• Can be used for load switching in industrial equipment
• Suitable for surface-mount assemblies requiring thermal endurance
What gate voltage limits must be observed during use?
The device must not be driven beyond ±16 V gate-to-source to prevent gate stress.
What package and mounting style does the component use?
It is supplied in a TO-252 package intended for surface mounting with three pins.
How does the device behave across temperature extremes?
It is specified to operate from −55 °C up to 175 °C for use in wide-temperature environments.
What channel conduction type is implemented and how does it affect activation?
It uses an N-channel enhancement mode, so a positive gate voltage relative to the source is required to turn it on.
Related links
- Infineon OptiMOS Type N-Channel MOSFET & Diode 60 V Enhancement, 3-Pin TO-252
- Infineon OptiMOS Type N-Channel MOSFET & Diode 60 V Enhancement, 3-Pin TO-252
- Infineon OptiMOS Type N-Channel MOSFET & Diode 60 V Enhancement, 3-Pin TO-252 IPD90N06S407ATMA2
- Infineon OptiMOS Type N-Channel MOSFET & Diode 75 V Enhancement, 3-Pin TO-263
- Infineon OptiMOS Type N-Channel MOSFET & Diode 120 V Enhancement, 3-Pin TO-263
- Infineon OptiMOS Type N-Channel MOSFET & Diode 75 V Enhancement, 3-Pin TO-263 IPB100N08S2L07ATMA1
- Infineon OptiMOS Type N-Channel MOSFET & Diode 120 V Enhancement, 3-Pin TO-263 IPB70N12S311ATMA1
- Infineon OptiMOS Type N-Channel MOSFET & Diode 60 V Enhancement, 8-Pin TSDSON BSZ100N06NSATMA1