Infineon OptiMOS N-Channel MOSFET & Diode, 40 A, 60 V Enhancement, 8-Pin TSDSON BSZ100N06NSATMA1
- RS Stock No.:
- 220-7362
- Mfr. Part No.:
- BSZ100N06NSATMA1
- Manufacturer:
- Infineon
The image is for reference only, please refer to product details and specifications
Subtotal (1 pack of 20 units)*
HK$141.70
FREE delivery for orders over HK$250.00
- Shipping from 30 September 2027
Units | Per unit | Per Pack* |
|---|---|---|
| 20 - 1240 | HK$7.085 | HK$141.70 |
| 1260 - 2480 | HK$6.915 | HK$138.30 |
| 2500 + | HK$6.80 | HK$136.00 |
*price indicative
- RS Stock No.:
- 220-7362
- Mfr. Part No.:
- BSZ100N06NSATMA1
- Manufacturer:
- Infineon
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET & Diode | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 40A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | OptiMOS | |
| Package Type | TSDSON | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 1mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 12nC | |
| Maximum Power Dissipation Pd | 36W | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.2mm | |
| Standards/Approvals | No | |
| Length | 5.35mm | |
| Width | 6.1mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET & Diode | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 40A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series OptiMOS | ||
Package Type TSDSON | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 1mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 12nC | ||
Maximum Power Dissipation Pd 36W | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Height 1.2mm | ||
Standards/Approvals No | ||
Length 5.35mm | ||
Width 6.1mm | ||
Automotive Standard No | ||
Infineon OptiMOS Series MOSFET & Diode, 60V Maximum Drain Source Voltage, 40A Maximum Continuous Drain Current - BSZ100N06NSATMA1
Features and Benefits:
• 1mΩ maximum RDS(on) minimises conduction losses under load
• 40A continuous drain current supports high-current power stages
• 12nC typical gate charge allows controlled switching behaviour
• 36W maximum power dissipation sustains thermal load briefly
• 20V gate-source limit provides headroom for drive circuits
Applications
• Ideal for DC-DC converter output stage switching
• Used with motor-drive half-bridges requiring high current
• Can be used for battery management and load switching
• Used for point-of-load regulation in Compact systems
What temperature range can it tolerate in operation?
Which mounting method is required for assembly?
How many connection pins are available for PCB layout?
What channel conduction mode does it employ?
Related links
- Infineon OptiMOS Type N-Channel MOSFET & Diode 60 V Enhancement, 8-Pin TSDSON
- Infineon OptiMOS Type N-Channel MOSFET & Diode 40 V Enhancement, 8-Pin TSDSON
- Infineon OptiMOS Type N-Channel MOSFET & Diode 40 V Enhancement, 8-Pin TSDSON IPZ40N04S5L4R8ATMA1
- Infineon OptiMOS Type N-Channel MOSFET 25 V Enhancement, 8-Pin TSDSON
- Infineon OptiMOS Type N-Channel MOSFET 40 V Enhancement, 8-Pin TSDSON
- Infineon OptiMOS Type N-Channel MOSFET 25 V Enhancement, 8-Pin TSDSON
- Infineon OptiMOS Type N-Channel MOSFET 30 V Enhancement, 8-Pin TSDSON
- Infineon OptiMOS Type N-Channel MOSFET 30 V Enhancement, 8-Pin TSDSON BSZ0904NSIATMA1
