Infineon OptiMOS Type N-Channel MOSFET & Diode, 40 A, 60 V Enhancement, 8-Pin TSDSON BSZ100N06NSATMA1

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Subtotal (1 pack of 20 units)*

HK$116.70

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Units
Per unit
Per Pack*
20 - 1240HK$5.835HK$116.70
1260 - 2480HK$5.695HK$113.90
2500 +HK$5.60HK$112.00

*price indicative

Packaging Options:
RS Stock No.:
220-7362
Mfr. Part No.:
BSZ100N06NSATMA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET & Diode

Maximum Continuous Drain Current Id

40A

Maximum Drain Source Voltage Vds

60V

Package Type

TSDSON

Series

OptiMOS

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

1mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

36W

Forward Voltage Vf

1.2V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

12nC

Maximum Operating Temperature

150°C

Standards/Approvals

No

Length

5.35mm

Width

6.1 mm

Height

1.2mm

Automotive Standard

No

The Infineon OptiMOS 5 60V is optimized for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger. In addition these devices are a perfect choice for a broad range of industrial applications including motor control, solar micro inverter and fast switching DC-DC converter.

Optimized for synchronous rectification

40% lower R DS(on) than alternative devices

40% improvement of FOM over similar devices

RoHS compliant - halogen free

MSL1 rated

Highest system efficiency

Less paralleling required

Increased power density

System cost reduction

Very low voltage overshoot

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