Infineon OptiMOS N-Channel MOSFET & Diode, 40 A, 60 V Enhancement, 8-Pin TSDSON
- RS Stock No.:
- 220-7361
- Mfr. Part No.:
- BSZ100N06NSATMA1
- Manufacturer:
- Infineon
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HK$14,440.00
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Units | Per unit | Per Reel* |
|---|---|---|
| 5000 - 20000 | HK$2.888 | HK$14,440.00 |
| 25000 + | HK$2.83 | HK$14,150.00 |
*price indicative
- RS Stock No.:
- 220-7361
- Mfr. Part No.:
- BSZ100N06NSATMA1
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET & Diode | |
| Maximum Continuous Drain Current Id | 40A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | OptiMOS | |
| Package Type | TSDSON | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 1mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 36W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 12nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 150°C | |
| Length | 5.35mm | |
| Width | 6.1mm | |
| Standards/Approvals | No | |
| Height | 1.2mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Product Type MOSFET & Diode | ||
Maximum Continuous Drain Current Id 40A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series OptiMOS | ||
Package Type TSDSON | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 1mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 36W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 12nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 150°C | ||
Length 5.35mm | ||
Width 6.1mm | ||
Standards/Approvals No | ||
Height 1.2mm | ||
Automotive Standard No | ||
Infineon OptiMOS Series MOSFET & Diode, 60V Maximum Drain Source Voltage, 40A Maximum Continuous Drain Current - BSZ100N06NSATMA1
This MOSFET & diode component is a surface-mount N-channel enhancement device intended for power switching applications that require low conduction losses and integrated diode performance. It operates across a wide temperature span and is suitable for designs needing substantial continuous current handling while fitted in a Compact TSDSON package.
Features and Benefits:
• 60V drain-source rating enables medium-voltage switching applications
• 1mΩ maximum RDS(on) minimises conduction losses under load
• 40A continuous drain current supports high-current power stages
• 12nC typical gate charge allows controlled switching behaviour
• 36W maximum power dissipation sustains thermal load briefly
• 20V gate-source limit provides headroom for drive circuits
• 1mΩ maximum RDS(on) minimises conduction losses under load
• 40A continuous drain current supports high-current power stages
• 12nC typical gate charge allows controlled switching behaviour
• 36W maximum power dissipation sustains thermal load briefly
• 20V gate-source limit provides headroom for drive circuits
Applications
• Suitable for synchronous rectification in power converters
• Ideal for DC-DC converter output stage switching
• Used with motor-drive half-bridges requiring high current
• Can be used for battery management and load switching
• Used for point-of-load regulation in Compact systems
• Ideal for DC-DC converter output stage switching
• Used with motor-drive half-bridges requiring high current
• Can be used for battery management and load switching
• Used for point-of-load regulation in Compact systems
What temperature range can it tolerate in operation?
It is specified to operate from −55°C up to 150°C.
Which mounting method is required for assembly?
It is intended for surface mounting in a TSDSON package.
How many connection pins are available for PCB layout?
The device uses eight pins for electrical and mechanical connections.
What channel conduction mode does it employ?
It is an enhancement-mode N-channel device.
Related links
- Infineon OptiMOS Type N-Channel MOSFET & Diode 60 V Enhancement, 8-Pin TSDSON BSZ100N06NSATMA1
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