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STMicroelectronics SCTH40N N-Channel MOSFET, 33 A, 1.2 kV Enhancement, 7-Pin H2PAK

RS Stock No.:: 219-4222P
Mfr. Part No.:: SCTH40N120G2V-7
Manufacturer:: STMicroelectronics

STMicroelectronics SCTH40N N-Channel MOSFET, 33 A, 1.2 kV Enhancement, 7-Pin H2PAK

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Subtotal 50 units (supplied on a continuous strip)*

HK$7,000.00

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Units	Per unit
50 - 99	HK$140.00
100 - 249	HK$137.50
250 - 499	HK$135.10
500 +	HK$131.00

*price indicative

RS Stock No.:: 219-4222P
Mfr. Part No.:: SCTH40N120G2V-7
Manufacturer:: STMicroelectronics

Specifications

Product overview and Technical data sheets

Legislation and Compliance

Product Details

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Select all	Attribute	Value
	Brand	STMicroelectronics
	Channel Type	N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	33A
	Maximum Drain Source Voltage Vds	1.2kV
	Package Type	H2PAK
	Series	SCTH40N
	Mount Type	Surface
	Pin Count	7
	Maximum Drain Source Resistance Rds	105mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	250W
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	61nC
	Maximum Gate Source Voltage Vgs	22V
	Maximum Operating Temperature	175°C
	Standards/Approvals	No
	Width	4.8mm
	Length	10.4mm
	Height	15.25mm
	Automotive Standard	No

	Select all
	Brand STMicroelectronics
	Channel Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 33A
	Maximum Drain Source Voltage Vds 1.2kV
	Package Type H2PAK
	Series SCTH40N
	Mount Type Surface
	Pin Count 7
	Maximum Drain Source Resistance Rds 105mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 250W
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 61nC
	Maximum Gate Source Voltage Vgs 22V
	Maximum Operating Temperature 175°C
	Standards/Approvals No
	Width 4.8mm
	Length 10.4mm
	Height 15.25mm
	Automotive Standard No

Datasheet - SCTH40N120G2V-7

The STMicroelectronics silicon carbide power MOSFET device has been developed using ST’s advanced and innovative 2nd generation Sic MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.

AEC-Q101 qualified

Very high operating junction temperature capability (TJ = 175 °C)

Very fast and robust intrinsic body diode

Extremely low gate charge and input capacitance

STMicroelectronics SCTH40N N-Channel MOSFET, 33 A, 1.2 kV Enhancement, 7-Pin H2PAK

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