Infineon OptiMOS-TM3 Type N-Channel MOSFET, 45 A, 80 V N, 3-Pin TO-252 IPD135N08N3GATMA1

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HK$88.20

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20 - 620HK$4.41HK$88.20
640 - 1240HK$4.30HK$86.00
1260 +HK$4.235HK$84.70

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Packaging Options:
RS Stock No.:
218-3041
Mfr. Part No.:
IPD135N08N3GATMA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

45A

Maximum Drain Source Voltage Vds

80V

Series

OptiMOS-TM3

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

13.5mΩ

Channel Mode

N

Forward Voltage Vf

1.2V

Maximum Power Dissipation Pd

79W

Typical Gate Charge Qg @ Vgs

19nC

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Height

2.41mm

Standards/Approvals

No

Width

6.22 mm

Length

6.73mm

Automotive Standard

No

The Infineon OptiMOS™ series N-channel power MOSFET. The OptiMOS™ is the market leader in highly efficient solutions for power generation (e.g. solar micro inverter), power supply (e.g. server and telecom) and power consumption (e.g. electric vehicle).

N-channel, normal level

100% avalanche tested

Pb-free plating

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