Infineon OptiMOS-TM3 Type N-Channel MOSFET, 114 A, 40 V Enhancement, 8-Pin TSDSON BSZ028N04LSATMA1
- RS Stock No.:
- 222-4627
- Mfr. Part No.:
- BSZ028N04LSATMA1
- Manufacturer:
- Infineon
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 pack of 15 units)*
HK$91.50
FREE delivery for orders over HK$250.00
In Stock
- 16,815 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 15 - 15 | HK$6.10 | HK$91.50 |
| 30 - 75 | HK$5.947 | HK$89.21 |
| 90 - 225 | HK$5.80 | HK$87.00 |
| 240 - 465 | HK$5.653 | HK$84.80 |
| 480 + | HK$5.513 | HK$82.70 |
*price indicative
- RS Stock No.:
- 222-4627
- Mfr. Part No.:
- BSZ028N04LSATMA1
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 114A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | OptiMOS-TM3 | |
| Package Type | TSDSON | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 2.8mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1V | |
| Maximum Power Dissipation Pd | 63W | |
| Typical Gate Charge Qg @ Vgs | 32nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.2mm | |
| Length | 5.35mm | |
| Standards/Approvals | No | |
| Width | 6.1 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 114A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series OptiMOS-TM3 | ||
Package Type TSDSON | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 2.8mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1V | ||
Maximum Power Dissipation Pd 63W | ||
Typical Gate Charge Qg @ Vgs 32nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Height 1.2mm | ||
Length 5.35mm | ||
Standards/Approvals No | ||
Width 6.1 mm | ||
Automotive Standard No | ||
The Infineon design of MOSFETs, also known as MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals.
Pb-free lead plating; RoHS compliant
Superior thermal resistance 100% avalanche tested
Halogen-free according to IEC61249-2-23
Related links
- Infineon OptiMOS-TM3 Type N-Channel MOSFET 40 V Enhancement, 8-Pin TSDSON
- Infineon OptiMOS-TM3 Type N-Channel MOSFET 100 V Enhancement, 8-Pin TSDSON
- Infineon OptiMOS-TM3 Type N-Channel MOSFET 100 V Enhancement, 8-Pin TSDSON BSZ150N10LS3GATMA1
- Infineon OptiMOS-TM3 Type N-Channel MOSFET 60 V Enhancement, 8-Pin TSDSON
- Infineon OptiMOS-TM3 Type N-Channel MOSFET 60 V Enhancement, 8-Pin TSDSON BSZ068N06NSATMA1
- Infineon OptiMOS-TM3 Type N-Channel MOSFET 100 V N, 8-Pin PG-TDSON-8 BSZ440N10NS3GATMA1
- Infineon OptiMOS-TM3 Type N-Channel MOSFET 100 V N, 3-Pin PG-TO-220
- Infineon OptiMOS-TM3 Type N-Channel MOSFET 100 V N, 3-Pin PG-TO-220 IPP086N10N3GXKSA1