Infineon OptiMOS N-Channel MOSFET, 46 A, 60 V N, 8-Pin TSDSON BSZ099N06LS5ATMA1
- RS Stock No.:
- 218-2986
- Mfr. Part No.:
- BSZ099N06LS5ATMA1
- Manufacturer:
- Infineon
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HK$181.30
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Units | Per unit | Per Pack* |
|---|---|---|
| 20 - 1240 | HK$9.065 | HK$181.30 |
| 1260 - 2480 | HK$8.845 | HK$176.90 |
| 2500 + | HK$8.70 | HK$174.00 |
*price indicative
- RS Stock No.:
- 218-2986
- Mfr. Part No.:
- BSZ099N06LS5ATMA1
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 46A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | OptiMOS | |
| Package Type | TSDSON | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 9.9mΩ | |
| Channel Mode | N | |
| Forward Voltage Vf | 1.1V | |
| Maximum Power Dissipation Pd | 36W | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 6.9nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Width | 3.4mm | |
| Height | 1.1mm | |
| Length | 3.4mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 46A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series OptiMOS | ||
Package Type TSDSON | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 9.9mΩ | ||
Channel Mode N | ||
Forward Voltage Vf 1.1V | ||
Maximum Power Dissipation Pd 36W | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 6.9nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Width 3.4mm | ||
Height 1.1mm | ||
Length 3.4mm | ||
Automotive Standard No | ||
Infineon OptiMOS Series MOSFET, 60V Maximum Drain Source Voltage, 46A Maximum Continuous Drain Current - BSZ099N06LS5ATMA1
This MOSFET is a power-switching transistor designed for high-current N-channel applications in Compact surface-mount assemblies, operating across a wide temperature range and providing controlled gate-drive behaviour for fast switching tasks.
Features and Benefits:
• 60 V drain rating enables medium-voltage switching capability
• 46 A continuous drain current supports high-current delivery
• 9.9 mΩ RDS(on) minimises conduction losses at rated current
• 36 W maximum dissipation allows significant power handling
• 6.9 nC typical gate charge reduces switching energy requirements
• 20 V gate tolerance permits robust gate-drive margins
• 46 A continuous drain current supports high-current delivery
• 9.9 mΩ RDS(on) minimises conduction losses at rated current
• 36 W maximum dissipation allows significant power handling
• 6.9 nC typical gate charge reduces switching energy requirements
• 20 V gate tolerance permits robust gate-drive margins
Applications
• Suitable for DC-DC converters in Compact power supplies
• Ideal for high-current synchronous rectification stages
• Used for motor-drive half-bridge switching elements
• Can be used for power management in industrial electronics
• Suitable for surface-mount assemblies requiring small footprints
• Ideal for high-current synchronous rectification stages
• Used for motor-drive half-bridge switching elements
• Can be used for power management in industrial electronics
• Suitable for surface-mount assemblies requiring small footprints
What package and mounting type does it use?
It is supplied in a TSDSON package designed for surface mounting.
What thermal performance is expected across the operating range?
It operates from −55 °C up to 150 °C, enabling deployment in wide-temperature environments.
How does gate charge affect switching performance?
A typical gate charge of 6.9 nC reduces drive energy and supports Faster transitions.
What gate-source voltage should be observed for safe operation?
The gate-source voltage must not exceed 20 V to avoid device damage.
What is the device channel configuration?
The device uses an N-type channel in enhancement mode for standard MOSFET switching.
Related links
- Infineon OptiMOS Type N-Channel MOSFET 60 V N, 8-Pin TSDSON
- Infineon OptiMOS Type N-Channel MOSFET 60 V Enhancement, 8-Pin TDSON
- Infineon OptiMOS Type N-Channel MOSFET 60 V Enhancement, 8-Pin TDSON BSC097N06NSATMA1
- Infineon OptiMOS 5 Type N-Channel MOSFET 30 V N, 8-Pin TSDSON
- Infineon OptiMOS Type N-Channel MOSFET & Diode 60 V Enhancement, 8-Pin TSDSON
- Infineon OptiMOS 5 Type N-Channel MOSFET 30 V N, 8-Pin TSDSON BSZ0589NSATMA1
- Infineon OptiMOS Type N-Channel MOSFET & Diode 60 V Enhancement, 8-Pin TSDSON BSZ100N06NSATMA1
- Infineon OptiMOS Type N-Channel MOSFET 25 V Enhancement, 8-Pin TSDSON