Infineon OptiMOS Type N-Channel MOSFET, 46 A, 60 V N, 8-Pin TSDSON BSZ099N06LS5ATMA1

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HK$111.20

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20 - 1240HK$5.56HK$111.20
1260 - 2480HK$5.42HK$108.40
2500 +HK$5.335HK$106.70

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Packaging Options:
RS Stock No.:
218-2986
Mfr. Part No.:
BSZ099N06LS5ATMA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

46A

Maximum Drain Source Voltage Vds

60V

Series

OptiMOS

Package Type

TSDSON

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

9.9mΩ

Channel Mode

N

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

36W

Forward Voltage Vf

1.1V

Typical Gate Charge Qg @ Vgs

6.9nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Length

3.4mm

Standards/Approvals

No

Width

3.4 mm

Height

1.1mm

Automotive Standard

No

The Infineon OptiMOS™ series N-channel power MOSFET. It is highly suitable for wireless charging, adapter and telecom applications. The devices low gate charge (Q g) reduces switching losses without compromising conduction losses.

100% avalanche tested

Superior thermal resistance

Pb-free lead plating

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