Infineon HEXFET N-Channel MOSFET, 45 A, 250 V, 3-Pin TO-263 IRFS4229TRLPBF
- RS Stock No.:
- 217-2634
- Mfr. Part No.:
- IRFS4229TRLPBF
- Manufacturer:
- Infineon
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Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 195 | HK$42.24 | HK$211.20 |
| 200 - 395 | HK$41.18 | HK$205.90 |
| 400 + | HK$40.56 | HK$202.80 |
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- RS Stock No.:
- 217-2634
- Mfr. Part No.:
- IRFS4229TRLPBF
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 45A | |
| Maximum Drain Source Voltage Vds | 250V | |
| Series | HEXFET | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 48mΩ | |
| Maximum Power Dissipation Pd | 330W | |
| Typical Gate Charge Qg @ Vgs | 110nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.3V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 175°C | |
| Height | 9.65mm | |
| Length | 10.67mm | |
| Standards/Approvals | EIA 418 | |
| Width | 4.83mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 45A | ||
Maximum Drain Source Voltage Vds 250V | ||
Series HEXFET | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 48mΩ | ||
Maximum Power Dissipation Pd 330W | ||
Typical Gate Charge Qg @ Vgs 110nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.3V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 175°C | ||
Height 9.65mm | ||
Length 10.67mm | ||
Standards/Approvals EIA 418 | ||
Width 4.83mm | ||
Automotive Standard No | ||
Infineon HEXFET Series MOSFET, 250V Maximum Drain Source Voltage, 45A Maximum Continuous Drain Current - IRFS4229TRLPBF
This MOSFET is a high-voltage switching transistor designed for surface-mounted power applications where robust drain handling and wide temperature operation are required. It functions as an N-channel power device suitable for fast switching and high-current circuits, operating across an extended ambient range with industry-standard approval for EIA-418.
Features and Benefits:
• 250V drain rating delivers high-voltage switching capability
• 45A continuous drain current supports heavy load currents
• 48mΩ Rds(on) reduces conduction losses under load
• 330W power dissipation enables sustained thermal handling
• 110nC gate charge allows predictable gate-drive sizing
• 1.3V forward voltage minimises diode conduction drop
• 45A continuous drain current supports heavy load currents
• 48mΩ Rds(on) reduces conduction losses under load
• 330W power dissipation enables sustained thermal handling
• 110nC gate charge allows predictable gate-drive sizing
• 1.3V forward voltage minimises diode conduction drop
Applications
• Suitable for high-voltage DC-DC converters
• Ideal for motor-drive stages in power electronics
• Used with switching regulators and power supplies
• Can be used for high-current load switching
• Suitable for surface-mount assemblies on heatsink-backed PCBs
• Ideal for motor-drive stages in power electronics
• Used with switching regulators and power supplies
• Can be used for high-current load switching
• Suitable for surface-mount assemblies on heatsink-backed PCBs
What package and mounting style does it use?
It is supplied in a TO-263 package intended for surface mounting.
What environmental conditions can it withstand?
It is specified to operate from -55°C up to 175°C.
How much gate drive energy should designers budget for?
Designers should account for a typical gate charge of 110nC when sizing gate drivers.
Is it suitable for automotive specification applications?
It is not classified as meeting automotive-grade standards.
What maximum gate-to-source voltage must be observed?
The maximum gate-to-source voltage rating is 20V.
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