Infineon HEXFET N-Channel MOSFET, 45 A, 250 V, 3-Pin TO-263
- RS Stock No.:
- 217-2633
- Mfr. Part No.:
- IRFS4229TRLPBF
- Manufacturer:
- Infineon
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Subtotal (1 reel of 800 units)*
HK$12,887.20
FREE delivery for orders over HK$250.00
- 2,400 unit(s) ready to ship from another location
Units | Per unit | Per Reel* |
|---|---|---|
| 800 - 3200 | HK$16.109 | HK$12,887.20 |
| 4000 + | HK$15.787 | HK$12,629.60 |
*price indicative
- RS Stock No.:
- 217-2633
- Mfr. Part No.:
- IRFS4229TRLPBF
- Manufacturer:
- Infineon
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 45A | |
| Maximum Drain Source Voltage Vds | 250V | |
| Series | HEXFET | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 48mΩ | |
| Forward Voltage Vf | 1.3V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 110nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 330W | |
| Maximum Operating Temperature | 175°C | |
| Width | 4.83mm | |
| Length | 10.67mm | |
| Standards/Approvals | EIA 418 | |
| Height | 9.65mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 45A | ||
Maximum Drain Source Voltage Vds 250V | ||
Series HEXFET | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 48mΩ | ||
Forward Voltage Vf 1.3V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 110nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 330W | ||
Maximum Operating Temperature 175°C | ||
Width 4.83mm | ||
Length 10.67mm | ||
Standards/Approvals EIA 418 | ||
Height 9.65mm | ||
Automotive Standard No | ||
Infineon HEXFET Series MOSFET, 250V Maximum Drain Source Voltage, 45A Maximum Continuous Drain Current - IRFS4229TRLPBF
Features and Benefits:
• 45A continuous drain current supports heavy load currents
• 48mΩ Rds(on) reduces conduction losses under load
• 330W power dissipation enables sustained thermal handling
• 110nC gate charge allows predictable gate-drive sizing
• 1.3V forward voltage minimises diode conduction drop
Applications
• Ideal for motor-drive stages in power electronics
• Used with switching regulators and power supplies
• Can be used for high-current load switching
• Suitable for surface-mount assemblies on heatsink-backed PCBs
What package and mounting style does it use?
What environmental conditions can it withstand?
How much gate drive energy should designers budget for?
Is it suitable for automotive specification applications?
What maximum gate-to-source voltage must be observed?
Related links
- Infineon HEXFET Type N-Channel MOSFET 250 V, 3-Pin TO-263 IRFS4229TRLPBF
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- Infineon HEXFET Type N-Channel MOSFET 75 V Enhancement, 3-Pin TO-252 IRFR2607ZTRPBF
- Infineon HEXFET Type N-Channel MOSFET 40 V Enhancement, 3-Pin TO-263 IRFS7437TRLPBF
- Infineon HEXFET Type N-Channel MOSFET 150 V, 3-Pin TO-263
- Infineon HEXFET Type N-Channel MOSFET 40 V, 7-Pin TO-263
- Infineon HEXFET Type N-Channel MOSFET 100 V, 3-Pin TO-263
