Infineon HEXFET Type N-Channel MOSFET, 45 A, 250 V, 3-Pin TO-263
- RS Stock No.:
- 217-2633
- Mfr. Part No.:
- IRFS4229TRLPBF
- Manufacturer:
- Infineon
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Subtotal (1 reel of 800 units)*
HK$13,435.20
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In Stock
- Plus 2,400 unit(s) shipping from 23 February 2026
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Units | Per unit | Per Reel* |
|---|---|---|
| 800 - 3200 | HK$16.794 | HK$13,435.20 |
| 4000 + | HK$16.459 | HK$13,167.20 |
*price indicative
- RS Stock No.:
- 217-2633
- Mfr. Part No.:
- IRFS4229TRLPBF
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 45A | |
| Maximum Drain Source Voltage Vds | 250V | |
| Package Type | TO-263 | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 48mΩ | |
| Maximum Power Dissipation Pd | 330W | |
| Typical Gate Charge Qg @ Vgs | 110nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | EIA 418 | |
| Height | 9.65mm | |
| Width | 4.83 mm | |
| Length | 10.67mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 45A | ||
Maximum Drain Source Voltage Vds 250V | ||
Package Type TO-263 | ||
Series HEXFET | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 48mΩ | ||
Maximum Power Dissipation Pd 330W | ||
Typical Gate Charge Qg @ Vgs 110nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals EIA 418 | ||
Height 9.65mm | ||
Width 4.83 mm | ||
Length 10.67mm | ||
Automotive Standard No | ||
The Infineon HEXFET® Power MOSFET is specifically designed for Sustain ; Energy Recovery & Pass switch applications in plasma Display panels. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area and low E pulse rating.
Advanced Process Technology
Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications
Low EPULSE Rating to Reduce Power Dissipation in PDP Sustain, Energy Recovery and Pass Switch Applications
Low QG for Fast Response
High Repetitive Peak Current Capability for Reliable Operation
Short Fall & Rise Times for Fast Switching
175°C Operating Junction Temperature for Improved Ruggedness
Repetitive Avalanche Capability for Robustness and Reliability
Related links
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